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参数资料
| 型号： | WS512K32BV-XXXE |
| 英文描述： | 512Kx32 3.3V SRAM MODULE |
| 中文描述： | 512Kx32 3.3V的静态存储器模块 |
| 文件页数： | 3/8页 |
| 文件大小： | 342K |
| 代理商： | WS512K32BV-XXXE |
WS512K32BV-XXXE
3
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
December, 1999
Rev. 2
CAPACITANCE
(T
A
= +25°C)
Symbol Conditions
C
OE
C
WE
Parameter
OE# capacitance
WE#1-4 capacitance
HIP (PGA)
CQFP G2
CS#1-4 capacitance
Data I/O capacitance
Address input capacitance C
AD
This parameter is guaranteed by design but not tested.
Max Unit
V
IN
= 0 V, f = 1.0 MHz 50
V
IN
= 0 V, f = 1.0 MHz 20
pF
pF
20
C
CS
C
I/O
V
IN
= 0 V, f = 1.0 MHz 20
V
I/O
= 0 V, f = 1.0 MHz 20
V
IN
= 0 V, f = 1.0 MHz 50
pF
pF
pF
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
Min
-40
-65
-0.5
Max
+85
+150
4.6
150
4.6
Unit
°C
°C
V
°C
V
-0.5
CS#
H
L
L
L
OE#
X
L
X
H
WE#
X
H
L
H
Mode
Standby
Read
Write
Out Disable
Data I/O
High Z
Data Out
Data In
High Z
Power
Standby
Active
Active
Active
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
IH
V
IL
Min
3.0
2.2
-0.3
Max
3.6
Unit
V
V
V
V
CC
+ 0.3
+0.8
DC CHARACTERISTICS
(V
CC
= 3.3V ± 0.3V, V
SS
= 0V, T
A
= -40°C to +85°C)
Parameter
Input Leakage Current
Sym
I
LI
Conditions
V
IN
= GND to V
CC
Min
Max
10
Units
μA
Output Leakage Current
I
LO
CS# = V
IH
, OE# = V
IH
, V
OUT
= GND to VCC
10
μA
Operating Supply Current (x 32 Mode)
I
CC
x 32
CS# = V
IL
, OE# = V
IH
, f = 5MHz, V
CC
= 3.6V
480
mA
Standby Current
I
SB
CS# = V
IH
, OE# = V
IH
, f = 5MHz, V
CC
= 3.6V
110
mA
Output Low Voltage
V
OL
I
OL
= 8mA
0.4
V
Output High Voltage
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
V
OH
I
OH
= -4.0mA
2.4
V
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