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参数资料
| 型号： | WS512K32N-55H1M |
| 元件分类： | SRAM |
| 英文描述： | 512K X 32 MULTI DEVICE SRAM MODULE, 55 ns, CHIP66 |
| 封装： | CERAMIC, HIP-66 |
| 文件页数： | 1/10页 |
| 文件大小： | 150K |
| 代理商： | WS512K32N-55H1M |
1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
HI-RELIABILITY PRODUCT
WS512K32-XXX
512Kx32 SRAM MODULE, SMD 5962-94611
FEATURES
s Access Times of 15*, 17, 20, 25, 35, 45, 55ns
s Packaging
66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP
(Package 400).
68 lead, 40mm Hermetic Low Profile CQFP, 3.5mm (0.140")
(Package 502), Package to be developed.
68 lead, Hermetic CQFP (G2T), 22.4mm (0.880") square
(Package 509) 4.57mm (0.180") height.
Designed to fit JEDEC 68 lead 0.990" CQFJ footprint (Fig. 3).
68 lead, Hermetic CQFP (G1U), 22.4mm (0.880") square
(Package 519) 3.57mm (0.140") height.
Designed to fit JEDEC 68 lead 0.990" CQFJ footprint (Fig. 3).
s Organized as 512Kx32, User Configurable as 1Mx16 or 2Mx8
FIG. 1
PIN CONFIGURATION FOR WS512K32N-XH1X
PIN DESCRIPTION
I/O8
I/O9
I/O10
A13
A14
A15
A16
A17
I/O0
I/O1
I/O2
WE2
CS2
GND
I/O11
A10
A11
A12
VCC
CS1
NC
I/O3
I/O15
I/O14
I/O13
I/O12
OE
A18
WE1
I/O7
I/O6
I/O5
I/O4
I/O24
I/O25
I/O26
A6
A7
NC
A8
A9
I/O16
I/O17
I/O18
VCC
CS4
WE4
I/O27
A3
A4
A5
WE3
CS3
GND
I/O19
I/O31
I/O30
I/O29
I/O28
A0
A1
A2
I/O23
I/O22
I/O21
I/O20
11
22
33
44
55
66
1
12
23
34
45
56
I/O0-31
Data Inputs/Outputs
A0-18
Address Inputs
WE1-4
Write Enables
CS1-4
Chip Selects
OE
Output Enable
VCC
Power Supply
GND
Ground
NC
Not Connected
512K x 8
8
I/O 0-7
WE CS
1
512K x 8
8
I/O 8-15
WE CS
2
512K x 8
8
I/O 16-23
WE CS
3
512K x 8
8
I/O 24-31
WE CS
4
A 0- 18
OE
TOP VIEW
BLOCK DIAGRAM
s Commercial, Industrial and Military Temperature Ranges
s TTL Compatible Inputs and Outputs
s 5 Volt Power Supply
s Low Power CMOS
s Built-in Decoupling Caps and Multiple Ground Pins for Low
Noise Operation
s Weight
WS512K32-XH1X - 13 grams typical
WS512K32-XG2TX - 8 grams typical
WS512K32-XG1UX - 5 grams typical
WS512K32-XG4TX - 20 grams typical
* 15ns Access Time available only in Commercial and Industrial Temperature.
This speed is not fully characterized and is subject to change without notice.
October 2000 Rev.7
相关PDF资料 |
PDF描述 |
|---|---|
| WS512K32-55G2TMA | 512K X 32 MULTI DEVICE SRAM MODULE, 55 ns, CQFP68 |
| WS512K32L-15G1UC | 512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CQFP68 |
| WS512K32L-17G4TQ | 512K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68 |
| WS512K32L-45G2TM | 512K X 32 MULTI DEVICE SRAM MODULE, 45 ns, CQFP68 |
| WS512K32L-45H1Q | 512K X 32 MULTI DEVICE SRAM MODULE, 45 ns, CHIP66 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| WS512K32N-55H1MA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SRAM|512KX32|CMOS|PGA|66PIN|CERAMIC |
| WS512K32N-55H1Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x32 SRAM Module |
| WS512K32N-55H1QA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SRAM|512KX32|CMOS|PGA|66PIN|CERAMIC |
| WS512K32N-70HC | 制造商:Microsemi Corporation 功能描述:512K X 32 SRAM MODULE, 5V, 70NS, NO CONNECT, 66 PGA 1.185" S - Bulk |
| WS512K32N-70HI | 制造商:Microsemi Corporation 功能描述:512K X 32 SRAM MODULE, 5V, 70NS, NO CONNECT, 66 PGA 1.185" S - Bulk |
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