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参数资料
| 型号： | WS512K8L-20CQ |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | SRAM |
| 英文描述： | 512K X 8 MULTI DEVICE SRAM MODULE, 20 ns, CDIP32 |
| 封装： | 0.600 INCH, CERAMIC DIP-32 |
| 文件页数： | 2/6页 |
| 文件大小： | 223K |
| 代理商： | WS512K8L-20CQ |
2
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WS512K8-XCX
December 2004
Rev. 5
FIGURE 2 – AC TEST CIRCUIT
Current Source
IOL
IOH
D.U.T.
CEFF = 50 pf
VZ 1.5V
(Bipolar Supply)
TRUTH TABLE
CS#
OE#
WE#
Mode
Data I/O
Power
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
X
L
Write
Data In
Active
L
H
Out Disable
High Z
Active
CAPACITANCE
(TA = +25°C)
Parameter
Symbol
Condition
Max
Unit
Input capacitance
CIN
VIN = 0V, f = 1.0MHZ
45
pF
Output capicitance
COUT
VOUT = 0V, f = 1.0MHZ
45
pF
This parameter is guaranteed by design but not tested.
AC TEST CONDITIONS
Parameter
Typ
Unit
Input Pulse Levels
VIL = 0, VIH = 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 Ω
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
VCC+0.5
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
7.0
V
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.5
+0.8
V
Operating Temp. (Mil.)
TA
-55
+125
°C
DC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ 125°C)
Parameter
Symbol Conditions
-20
-25
-35
-45
Units
Min
Max
Min
Max
Min
Max
Min
Max
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
μA
Output Leakage Current
ILO
CS# = VIH, OE# = VIH, VOUT = GND to VCC
10
μA
Operating Supply Current
ICC
CS# = VIL, OE# = VIH, f = 5MHZ, VCC = 5.5
210
mA
Standby Current
ISB
CS# = VIH, OE# = VIH, f = 5MHZ
80
60
55
mA
Output Low Voltage
VOL
IOL = 8mA, VCC = 4.5
0.4
V
Output High Voltage
VOH
IOH = -4.0mA, VCC = 4.5
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
DATA RETENTION CHARACTERISTICS FOR LOW POWER “L” VERSION
(-55°C ≤ TA ≤ 125°C)
Parameter
Symbol Conditions
-20
-25
-35
-45
Units
Min Typ Max Min Typ Max Min Typ Max Min Typ Max
Data Retention Supply Voltage
VDR
CS# VCC -0.2V
2.0
5.5 2.0
5.5
V
Data Retention Current
ICCDR1VCC = 3V
8.0 12.8
8.0 12.8 mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| WS512K8L-20CQA | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512Kx8 SRAM MODULE, SMD 5962-92078 |
| WS512K8L-25CC | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512Kx8 SRAM MODULE, SMD 5962-92078 |
| WS512K8L-25CCA | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512Kx8 SRAM MODULE, SMD 5962-92078 |
| WS512K8L-25CI | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512Kx8 SRAM MODULE, SMD 5962-92078 |
| WS512K8L-25CIA | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512Kx8 SRAM MODULE, SMD 5962-92078 |
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