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参数资料
| 型号： | WS57C49C-70TMB |
| 元件分类： | PROM |
| 英文描述： | 8K X 8 UVPROM, 70 ns, CQCC28 |
| 封装： | CERAMIC, LCC-28 |
| 文件页数： | 4/7页 |
| 文件大小： | 54K |
| 代理商： | WS57C49C-70TMB |
WS57C49C
2-42
SYMBOL
PARAMETER
CONDITIONS
TYP(5)
MAX
UNITS
CIN
Input Capacitance
VIN = 0V
4
6
pF
COUT
Output Capacitance
VOUT = 0V
8
12
pF
CVPP
VPP Capacitance
VPP = 0 V
18
25
pF
CAPACITANCE(4) T
A = 25 °C, f = 1 MHz
30 pF
(INCLUDING SCOPE
AND JIG
CAPACITANCE)
98
2.01 V
D.U.T.
A.C. TESTING INPUT/OUTPUT WAVEFORM
TEST LOAD (High Impedance Test Systems)
3.0
0.0
1.5
TEST
POINTS
NOTE: 6. Provide adequate decoupling capacitance as close as possible to this device to achieve the published A.C. and D.C. parameters.
A 0.1 microfarad capacitor in parallel with a 0.01 microfarad capacitor connected between VCC and ground is recommended.
Inadequate decoupling may result in access time degradation or other transient performance failures.
NOTES: 4. This parameter is only sampled and is not 100% tested.
5.Typical values are for TA = 25°C and nominal supply voltages.
A.C. testing inputs are driven at 3.0 V for a logic "1" and 0.0 V
for a logic "0." Timing measurements are made at 1.5 V for
input and output transitions in both directions.
相关PDF资料 |
PDF描述 |
|---|---|
| WS57C49C-45T | 8K X 8 UVPROM, 45 ns, CDIP24 |
| WS57C49C-70T | 8K X 8 UVPROM, 70 ns, CDIP24 |
| WS57C51C-35T | 16K X 8 UVPROM, 35 ns, CDIP28 |
| WS57C51C-55T | 16K X 8 UVPROM, 55 ns, CDIP28 |
| WS57C51C-55DMB | 16K X 8 UVPROM, 55 ns, CDIP28 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| WS57C51B | 制造商:WSI 功能描述: |
| WS57C51B-45T | 制造商:WSI 功能描述: |
| WS57C51B-55TMB | 制造商:WSI 功能描述: |
| WS57C51C | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:HIGH SPEED 16K x 8 CMOS PROM/RPROM |
| WS57C51C- | 制造商:未知厂家 制造商全称:未知厂家 功能描述:WS57C51C MILITARY HIGH SPEED 16K X 8 CMOS PROM/RPROM |
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