- 您现在的位置：买卖IC网 > PDF目录140394 > WSE128K16-35H1C (WHITE ELECTRONIC DESIGNS CORP) SPECIALTY MEMORY CIRCUIT, CPGA66 PDF资料下载
参数资料
| 型号： | WSE128K16-35H1C |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | 存储器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, CPGA66 |
| 封装： | 1.075 X 1.075 INCH, PGA TYPE, HERMETIC SEALED, CERAMIC, HIP-66 |
| 文件页数： | 1/15页 |
| 文件大小： | 635K |
| 代理商： | WSE128K16-35H1C |
WSE128K16-XXX
1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
PRELIMINARY*
White Electronic Designs Corp. reserves the right to change products or specications without notice.
March 2005
Rev. 3
128Kx16 SRAM/EEPROM MODULE
FEATURES
Access Times of 35ns (SRAM) and 150ns (EEPROM)
Access Times of 45ns (SRAM) and 120ns (EEPROM)
Access Times of 70ns (SRAM) and 300ns (EEPROM)
Packaging
66 pin, PGA Type, 1.075" square HIP, Hermetic
Ceramic HIP (H1) (Package 400)
68 lead, Hermetic CQFP (G2T), 22mm (0.880")
square (Package 509). Designed to t JEDEC 68
lead 0.990" CQFJ footprint (FIGURE 2)
128Kx16 SRAM
128Kx16 EEPROM
Organized as 128Kx16 of SRAM and 128Kx16 of
EEPROM Memory with separate Data Buses
Both blocks of memory are User Congurable as
256Kx8
Low Power CMOS
BLOCK DIAGRAM
PIN DESCRIPTION
ED0-15
EEPROM Data Inputs/Outputs
SD0-15
SRAM Data Inputs/Outputs
A0-16
Address Inputs
SWE#1-2
SRAM Write Enable
SCS#1-2
SRAM Chip Selects
OE#
Output Enable
VCC
Power Supply
GND
Ground
NC
Not Connected
EWE#1-2
EEPROM Write Enable
ECS#1-2
EEPROM Chip Select
Top View
FIGURE 1 – WSE128K16-XH1X PIN
CONFIGURATION
Commercial, Industrial and Military Temperature
Ranges
TTL Compatible Inputs and Outputs
Built-in Decoupling Caps and Multiple Ground Pins
for Low Noise Operation
Weight - 13 grams typical
EEPROM MEMORY FEATURES
Write Endurance 10,000 Cycles
Data Retention at 25°C, 10 Years
Low Power CMOS Operation
Automatic Page Write Operation
Page Write Cycle Time 10ms Max.
Data Polling for End of Write Detection
Hardware and Software Data Protection
TTL Compatible Inputs and Outputs
* This product is under development, is not qualied or characterized and is subject to
change without notice.
SD8
SD9
SD10
A13
A14
A15
A16
NC
SD0
SD1
SD2
11
22
33
44
55
66
112
23
34
45
56
ED8
ED9
ED10
A6
A7
NC
A8
A9
ED0
ED1
ED2
SD15
SD14
SD13
SD12
OE#
NC
SWE#1
SD7
SD6
SD5
SD4
SWE2#
SCS2#
GND
SD11
A10
A11
A12
VCC
SCS1#
NC
SD3
ED15
ED14
ED13
ED12
A0
A1
A2
ED7
ED6
ED5
VCC
ECS2#
EWE2#
ED11
A3
A4
A5
EWE1#
ECS1#
GND
ED3
EWE1# ECS1#
EWE2# ECS2#
SWE2# SCS2#
128K x 8
SRAM
8
SD0-7
128K x 8
SRAM
8
SD8-15
128K x 8
EEPROM
8
ED0-7
128K x 8
EEPROM
8
ED8-15
A0-16
OE#
SWE1# SCS1#
相关PDF资料 |
PDF描述 |
|---|---|
| WSE128K16-35H1M | SPECIALTY MEMORY CIRCUIT, CPGA66 |
| WE128K16-150CQ | 128K X 16 EEPROM 5V MODULE, 150 ns, CDMA40 |
| WS512K32F-25H2IA | 2M X 8 MULTI DEVICE SRAM MODULE, 25 ns, CPGA66 |
| W7NCF02GH30CSADG | 128M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| W7NCF02GH30IS4JG | 128M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| WSE128K16-35H1CA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:128KX16 SRAM/EEPROM MODULE |
| WSE128K16-35H1I | 制造商:Microsemi Corporation 功能描述:128K X 16 MIXED MODULE, 5V, 35NS SRAM, 150NS EEPROM, 66 PGA - Bulk 制造商:White Electronic Designs 功能描述:128K X 16 MIXED MODULE, 5V, 35NS SRAM, 150NS EEPROM, 66 PGA - Bulk |
| WSE128K16-35H1IA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:128KX16 SRAM/EEPROM MODULE |
| WSE128K16-35H1M | 制造商:Microsemi Corporation 功能描述:128K X 16 MIXED MODULE, 5V, 70NS SRAM, 300NS EEPROM, 66 PGA - Bulk 制造商:White Electronic Designs 功能描述:128K X 16 MIXED MODULE, 5V, 70NS SRAM, 300NS EEPROM, 66 PGA - Bulk |
| WSE128K16-35H1MA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:128KX16 SRAM/EEPROM MODULE |
发布紧急采购，3分钟左右您将得到回复。