- 您现在的位置：买卖IC网 > PDF目录103808 > WSF128K16-72H1CA (MICROSEMI CORP-PMG MICROELECTRONICS) SPECIALTY MEMORY CIRCUIT, CPGA66 PDF资料下载
参数资料
| 型号： | WSF128K16-72H1CA |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | 存储器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, CPGA66 |
| 封装： | 1.075 X 1.075 INCH, CERAMIC, HIP-66 |
| 文件页数： | 11/16页 |
| 文件大小： | 686K |
| 代理商： | WSF128K16-72H1CA |
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WSF128K16-XXX
May 2003
Rev. 6
White Electronic Designs Corp. reserves the right to change products or specications without notice.
SRAM AC CHARACTERISTICS
VCC = 5.0V, -55°C ≤ TA ≤ +125°C
Parameter
Read Cycle
Symbol
-35
-70
Unit
Min Max Min Max
Read Cycle Time
tRC
35
70
ns
Address Access Time
tAA
35
70
ns
Output Hold from Address Change
tOH
03
ns
Chip Select Access Time
tACS
35
70
ns
Output Enable to Output Valid
tOE
20
35
ns
Chip Select to Output in Low Z
tCLZ1
33
ns
Output Enable to Output in Low Z
tOLZ1
00
ns
Chip Disable to Output in High Z
tCHZ1
20
25
ns
Output Disable to Output in High Z
tOHZ1
20
25
ns
1. This parameter is guaranteed by design but not tested.
SRAM AC CHARACTERISTICS
VCC = 5.0V, -55°C ≤ TA ≤ +125°C
Parameter
Write Cycle
Symbol
-35
-70
Unit
Min Max Min Max
Write Cycle Time
tWC
35
70
ns
Chip Select to End of Write
tCW
25
60
ns
Address Valid to End of Write
tAW
25
60
ns
Data Valid to End of Write
tDW
20
30
ns
Write Pulse Width
tWP
25
50
ns
Address Setup Time
tAS
05
ns
Address Hold Time
tAH
05
ns
Output Active from End of Write
tOW1
45
ns
Write Enable to Output in High Z
tWHZ1
20
25
ns
Data Hold from Write Time
tDH
00
ns
1. This parameter is guaranteed by design but not tested.
FIGURE 3
AC Test Circuit
AC TEST CONDITIONS
Parameter
Typ
Unit
Input Pulse Levels
VIL = 0, VIH = 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
Notes: VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75Ω.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
≈
相关PDF资料 |
PDF描述 |
|---|---|
| WSF128K16-72H1I | SPECIALTY MEMORY CIRCUIT, CPGA66 |
| WV3EG6434S265BD4SF | 32M X 64 DDR DRAM MODULE, 0.75 ns, DMA200 |
| WV3HG2128M72EEU665AD4-MG | 256M X 72 DDR DRAM MODULE, 0.45 ns, ZMA200 |
| W1D64M72R8A-3.75AP-QA1 | 64M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 |
| W1D64M72R8B-3.75AE-FB | 64M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| WSF128K16-72H1I | 制造商:Microsemi Corporation 功能描述:128K X 16 MIXED MODULE, 5V, 70NS SRAM, 120NS FLASH, 66 PGA 1 - Bulk |
| WSF128K16-72H1IA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:128K X 16 SRAM /FLASH MODULE SMD 5962-96900 |
| WSF128K16-72H1M | 制造商:Microsemi Corporation 功能描述:128K X 16 MIXED MODULE, 5V, 70NS SRAM, 120NS FLASH, 66 PGA 1 - Bulk |
| WSF128K16-72H1MA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:128K X 16 SRAM /FLASH MODULE SMD 5962-96900 |
| WSF128K16-72HC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:128K X 16 SRAM /FLASH MODULE SMD 5962-96900 |
发布紧急采购，3分钟左右您将得到回复。