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参数资料
| 型号： | WSF2816-39G2UIA |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | 存储器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, CQFP68 |
| 封装： | 0.880 X 0.880 INCH, 0.140 INCH HEIGHT, HERMETIC SEALED, CERAMIC, QFP-68 |
| 文件页数： | 9/15页 |
| 文件大小： | 670K |
| 代理商： | WSF2816-39G2UIA |
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White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WSF2816-39XX
May 2003
Rev. 6
White Electronic Designs Corp. reserves the right to change products or specications without notice.
DC CHARACTERISTICS
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
Conditions
Min
Max
Unit
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
μA
Output Leakage Current
ILO
SCS# = VIH, OE# = VIH, VOUT = GND to VCC
10
μA
SRAM Operating Supply Current x 16 Mode
ICCx16
SCS# = VIL, OE# = FCS# = VIH, f = 5MHz, VCC = 5.5
325
mA
Standby Current
ISB
FCS# = SCS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5
20
mA
SRAM Output Low Voltage
VOL
IOL = 8.0mA, VCC = 4.5
0.4
V
SRAM Output High Voltage
VOH
IOH = -4.0mA, VCC = 4.5
2.4
V
Flash VCC Active Current for Read (1)
ICC1
FCS# = VIL, OE# = SCS# = VIH
120
mA
Flash VCC Active Current for Program or Erase (2)
ICC2
FCS# = VIL, OE# = SCS# = VIH
140
mA
Flash Output Low Voltage
VOL
IOL = 8.0mA, VCC = 4.5
0.45
V
Flash Output High Voltage
VOH1
IOH = -2.5 mA, VCC = 4.5
0.85 x VCC
V
Flash Output High Voltage
VOH2
IOH = -100 μA, VCC = 4.5
VCC -0.4
V
Flash Low VCC Lock Out Voltage
VLKO
3.2
V
NOTES:
1. The ICC current listed includes both the DC operating current and the frequency dependent component (@ 5 MHz).
The frequency component typically is less than 2mA/MHz, with OE# at VIH.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
7.0
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
7.0
V
Parameter
Flash Data Retention
20 years
Flash Endurance (write/erase cycles)
100,000
NOTES: 1. Stresses above the absolute maximum rating may cause permanent
damage to the device. Extended operation at the maximum levels may
degrade performance and affect reliability.
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.5
+0.8
V
SRAM TRUTH TABLE
SCS#
OE#
SWE#
Mode
Data I/O
Power
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
H
Read
High Z
Active
L
X
L
Write
Data In
Active
CAPACITANCE
TA = +25°C
Test
Symbol
Condition
Max Unit
OE# Capacitance
COE
VIN = 0V, f = 1.0MHz
50
pF
WE# Capacitance
CWE
VIN = 0V, f = 1.0MHz
20
pF
CS# Capacitance
CCS
VIN = 0V, f = 1.0MHz
20
pF
Data I/O Capacitance
CI/O
VIN = 0V, f = 1.0MHz
20
pF
Address Line Capacitance
CAD
VIN = 0V, f = 1.0MHz
50
pF
This parameter is guaranteed by design but not tested.
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相关代理商/技术参数 |
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| WSF2816-39G2UM | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:128KX16 SRAM/512KX16 FLASH MODULE |
| WSF2816-39G2UMA | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:128KX16 SRAM/512KX16 FLASH MODULE |
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| WSF2816-39H1C | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:128KX16 SRAM/512KX16 FLASH MODULE |
| WSF2816-39H1CA | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:128KX16 SRAM/512KX16 FLASH MODULE |
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