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参数资料
| 型号： | WSF2816-39H1CA |
| 元件分类： | 存储器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, CHIP66 |
| 封装： | CERAMIC, HIP-66 |
| 文件页数： | 9/15页 |
| 文件大小： | 298K |
| 代理商： | WSF2816-39H1CA |
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WSF2816-39XX
ABSOLUTE MAXIMUM RATINGS
DC CHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA = -55
°C to +125°C)
Parameter
Symbol
Conditions
Min
Max
Unit
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
A
Output Leakage Current
ILO
SCS = VIH, OE = VIH, VOUT = GND to VCC
10
A
SRAM Operating Supply Current x 16 Mode
ICCx16
SCS = VIL, OE = FCS = VIH, f = 5MHz, VCC = 5.5
325
mA
Standby Current
ISB
FCS = SCS = VIH, OE = VIH, f = 5MHz, VCC = 5.5
20
mA
SRAM Output Low Voltage
VOL
IOL = 8.0mA, VCC = 4.5
0.4
V
SRAM Output High Voltage
VOH
IOH = -4.0mA, VCC = 4.5
2.4
V
Flash VCC Active Current for Read (1)
ICC1
FCS = VIL, OE = SCS = VIH
120
mA
Flash VCC Active Current for Program or
ICC2
FCS = VIL, OE = SCS = VIH
140
mA
Erase (2)
Flash Output Low Voltage
VOL
IOL = 12.0mA, VCC = 4.5
0.45
V
Flash Output High Voltage
VOH1
IOH = -2.5 mA, VCC = 4.5
0.85 x VCC
V
Flash Output High Voltage
VOH2
IOH = -100
A, VCC = 4.5
VCC -0.4
V
Flash Low VCC Lock Out Voltage
VLKO
3.2
V
Parameter
Flash Data Retention
20 years
Flash Endurance (write/erase cycles)
100,000
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage
to the device. Extended operation at the maximum levels may degrade
performance and affect reliability.
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.5
+0.8
V
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
7.0
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
7.0
V
NOTES:
1. The ICC current listed includes both the DC operating current and the frequency dependent component (@ 5 MHz).
The frequency component typically is less than 2 mA/MHz, with OE at VIH.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
SRAM TRUTH TABLE
SCS
OE
SWE
Mode
Data I/O
Power
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
H
Read
High Z
Active
L
X
L
Write
Data In
Active
CAPACITANCE
(TA = +25
°C)
Test
Symbol
Condition
Max
Unit
OE Capacitance
COE
VIN = 0V, f = 1.0MHz
50
pF
WE Capacitance
CWE
VIN = 0V, f = 1.0MHz
20
pF
CS Capacitance
CCS
VIN = 0V, f = 1.0MHz
20
pF
Data I/O Capacitance
CI/O
VIN = 0V, f = 1.0MHz
20
pF
Address Line Capacitance
CAD
VIN = 0V, f = 1.0MHz
50
pF
This parameter is guaranteed by design but not tested.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| WSF2816-39H1I | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:128KX16 SRAM/512KX16 FLASH MODULE |
| WSF2816-39H1IA | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:128KX16 SRAM/512KX16 FLASH MODULE |
| WSF2816-39H1M | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:128KX16 SRAM/512KX16 FLASH MODULE |
| WSF2816-39H1MA | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:128KX16 SRAM/512KX16 FLASH MODULE |
| WSF2816-39H1X | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SRAM/Flash MCP |
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