参数资料
型号: WSF41632-22H2CA
厂商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分类: 存储器
英文描述: SPECIALTY MEMORY CIRCUIT, CPGA66
封装: 1.385 X 1.385 INCH, PGA TYPE, HERMETIC SEALED, CERAMIC, HIP-66
文件页数: 1/14页
文件大小: 591K
代理商: WSF41632-22H2CA
WSF41632-22XX
1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
October, 2002
Rev. 4
PRELIMINARY*
White Electronic Designs Corp. reserves the right to change products or specications without notice.
128KX32 SRAM & 512Kx32 FLASH MIXED MODULE
Built-in decoupling caps and multiple ground pins
for low noise operation
Weight - 13 grams typical
FLASH MEMORY FEATURES
100,000 erase/program cycles minimum
Sector architecture
8 equal size sectors of 64KBytes each
Any combination of sectors can be concurrently
erased. Also supports full chip erase
5V programming; 5V ± 10% supply
Embedded erase and program algorithms
Hardware write protection
Page program operation and internal program
control time.
Note: For programming information refer to ash programming 4M5 application note.
* This product is under development, is not qualied or characterized and is subject to
change without notice.
FEATURES
Access times of 25ns (SRAM) and 120ns (FLASH)
Packaging
66 pin, PGA Type, 1.385" square HIP, hermetic
ceramic HIP (Package 402)
68 lead, hermetic CQFP (G2T), 22.4mm (0.880")
square (Package 509) 4.57mm (0.180") height
Designed to t JEDEC 68 lead 0.990" CQFJ
footprint (FIGURE 2). Package to be developed.
128Kx32 SRAM
512Kx32 5V Flash
Organized as 128Kx32 of SRAM and 512Kx32 of
Flash Memory with common data bus
Low power CMOS
Commercial, industrial and military temperature
ranges
TTL compatible inputs and outputs
I/O8
I/O9
I/O10
A14
A16
A11
A0
A18
I/O0
I/O1
I/O2
FWE2#
SWE2#
GND
I/O11
A10
A9
A15
VCC
FCS#
SCS#
I/O3
I/O15
I/O14
I/O13
I/O12
OE#
A17
FWE1#
I/O7
I/O6
I/O5
I/O4
I/O24
I/O25
I/O26
A7
A12
SWE1#
A13
A8
I/O16
I/O17
I/O18
VCC
SWE4#
FWE4#
I/O27
A4
A5
A6
FWE3#
SWE3#
GND
I/O19
I/O31
I/O30
I/O29
I/O28
A1
A2
A3
I/O23
I/O22
I/O21
I/O20
11
22
33
44
55
66
1
12
23
34
45
56
PIN CONFIGURATION FOR WSF41632-22H2X
Block Diagram
Pin Description
D0-31
Data Inputs/Outputs
A0-18
Address Inputs
SWE#1-4 SRAM Write Enables
SCS#
SRAM Chip Select
OE#
Output Enable
VCC
Power Supply
GND
Ground
NC
Not Connected
FWE#1-4 Flash Write Enables
FCS
Flash Chip Select
OE#
FCS#
SCS#
A0-18
FWE1# SWE1#
FWE2# SWE2#
FWE3# SWE3#
FWE4# SWE4#
128K x 8 Flash
128K x 8 SRAM
I/O0-7
128K x 8 Flash
128K x 8 SRAM
I/O8-15
128K x 8 Flash
128K x 8 SRAM
I/O16-23
128K x 8 Flash
128K x 8 SRAM
I/O24-31
Top View
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WSF41632-22H2I 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:128KX32 SRAM & 512Kx32 FLASH MIXED MODULE
WSF41632-22H2IA 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:128KX32 SRAM & 512Kx32 FLASH MIXED MODULE
WSF41632-22H2M 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:128KX32 SRAM & 512Kx32 FLASH MIXED MODULE
WSF41632-22H2MA 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:128KX32 SRAM & 512Kx32 FLASH MIXED MODULE
WSF41632-22H2X 制造商:未知厂家 制造商全称:未知厂家 功能描述:SRAM/Flash MCP