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参数资料
| 型号： | WSF512K16-72G2MA |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | 存储器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, CQFP68 |
| 封装： | 0.880 X 0.880 INCH, HERMETIC SEALED, CERAMIC, QFP-68 |
| 文件页数： | 1/15页 |
| 文件大小： | 641K |
| 代理商： | WSF512K16-72G2MA |
1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WSF512K16-XXX
May 2006
Rev. 6
White Electronic Designs Corp. reserves the right to change products or specications without notice.
512KX16 SRAM/FLASH MODULE, SMD 5962-96901
FEATURES
Access Times of 35ns (SRAM) and 90ns (FLASH)
Access Times of 70ns (SRAM) and 120ns (FLASH)
Packaging
66 pin, PGA Type, 1.385" square HIP, Hermetic
Ceramic HIP (Package 402)
68 lead, Hermetic CQFP (G2), 22mm (0.880")
square (Package 500). Designed to t JEDEC 68
lead 0.990” CQFJ footprint (FIGURE 2)
512Kx16 SRAM
512Kx16 5V FLASH
Organized as 512Kx16 of SRAM and 512Kx16 of
Flash Memory with separate Data Busses
Both blocks of memory are User Congurable as
1Mx8
Low Power CMOS
Commercial, Industrial and Military Temperature
Ranges
FIGURE 1 – PIN CONFIGURATION
FOR WSF512K16-XH2X
Top View
512K x 8
SRAM
512K x 8
SRAM
512K x 8
FLASH
512K x 8
FLASH
8
SD 0-7
SWE 1 # S CS1#
SWE 2 # S CS2#
FWE 1 # F CS1#
FWE 2 # F CS2#
8
SD 8-15
8
FD 0-7
8
FD 8-15
A 0-18
OE#
112
23
34
45
56
11
22
33
44
55
66
FD8
FD9
FD10
A6
A7
NC
A8
A9
FD0
FD1
FD2
FD15
FD14
FD13
FD12
A0
A1
A2
FD7
FD6
FD5
FD4
SD15
SD14
SD13
SD12
OE#
A17
SWE1#
SD7
SD6
SD5
SD4
SWE2#
SCS2#
GND
SD11
A10
A11
A12
VCC
SCS1#
NC
SD3
VCC
FCS2#
FWE2#
FD11
A3
A4
A5
FWE1#
FCS1#
GND
FD3
SD8
SD9
SD10
A13
A14
A15
A16
A18
SD0
SD1
SD2
TTL Compatible Inputs and Outputs
Built-in Decoupling Caps and Multiple Ground Pins
for Low Noise Operation
Weight - 13 grams typical
FLASH MEMORY FEATURES
100,000 Erase/Program Cycles
Sector Architecture
8 equal size sectors of 64K bytes each
Any combination of sectors can be concurrently
erased. Also supports full chip erase
5 Volt Programming; 5V ± 10% Supply
Embedded Erase and Program Algorithms
Hardware Write Protection
Page Program Operation and Internal Program
Control Time.
Note: Programming information available upon request.
Block Diagram
Pin Description
FD0-15
Flash Data Inputs/Outputs
SD0-15
SRAM Data Inputs/Outputs
A0-18
Address Inputs
SWE1-2#
SRAM Write Enable
SCS1-2#
SRAM Chip Selects
OE#
Output Enable
VCC
Power Supply
GND
Ground
NC
Not Connected
FWE1-2#
Flash Write Enable
FCS1-2#
Flash Chip Select
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相关代理商/技术参数 |
参数描述 |
|---|---|
| WSF512K16-72H2C | 制造商:Microsemi Corporation 功能描述:512K X 16 MIXED MODULE, 5V, 70NS SRAM, 120NS FLASH, 66 PGA 1 - Bulk |
| WSF512K16-72H2CA | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512KX16 SRAM/FLASH MODULE, SMD 5962-96901 |
| WSF512K16-72H2I | 制造商:Microsemi Corporation 功能描述:512K X 16 MIXED MODULE, 5V, 70NS SRAM, 120NS FLASH, 66 PGA 1 - Bulk |
| WSF512K16-72H2IA | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512KX16 SRAM/FLASH MODULE, SMD 5962-96901 |
| WSF512K16-72H2M | 制造商:Microsemi Corporation 功能描述:512K X 16 MIXED MODULE, 5V, 70NS SRAM, 120NS FLASH, 66 PGA 1 - Bulk |
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