参数资料
型号: WSF512K16-72H2I
元件分类: 存储器
英文描述: SPECIALTY MEMORY CIRCUIT, CHIP66
封装: 1.385 INCH SQUARE, HERMETIC SEALED, CERAMIC, HIP-66
文件页数: 15/15页
文件大小: 182K
代理商: WSF512K16-72H2I
9
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
FIG. 8
WRITE/ERASE/PROGRAM OPERATION, FLASH MEMORY FWE CONTROLLED
NOTES:
1. PA is the address of the memory location
to be programmed.
2. PD is the data to be programmed at byte address.
3. D7 is the output of the complement of the
data written to the device.
4. DOUT is the output of the data written to
the device.
5. Figure indicates last two bus cycles of four bus
cycle sequence.
Addresses
FCS
OE
FWE
Data
5.0
V
5555H
PA
tWC
tCS
PD
D
7
D
OUT
tAH
tWPH
tDH
tDS
Data
Polling
tAS
tRC
tWP
A0H
tOE
tDF
tOH
tCE
tGHWL
tWHWH1
WSF512K16-XXX
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