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参数资料
| 型号： | WV3EG216M64STSU335D4NG |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | DRAM |
| 英文描述： | 32M X 64 DDR DRAM MODULE, 0.7 ns, DMA200 |
| 封装： | ROHS COMPLIANT, SODIMM-200 |
| 文件页数： | 6/11页 |
| 文件大小： | 281K |
| 代理商： | WV3EG216M64STSU335D4NG |
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
August 2005
Rev. 0
White Electronic Designs Corp. reserves the right to change products or specications without notice.
PRELIMINARY*
WV3EG216M64STSU-D4
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Units
Voltage on any pin relative to VSS
VIN, VOUT
-0.5 ~ 3.6
V
Voltage on VCC and VCCQ supply relative to VSS
VCC, VCCQ
-0.5 ~ 3.6
V
Storage temperature
TSTG
-55 ~ +150
°C
Operating temperature
TA
0 ~ 70
°C
Power Dissipation
PD
8W
Short circuit output current
IOS
50
mA
NOTES:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC CHARACTERISTICS
0°C TA 70°C, VCC = 2.5V ± 0.2V
Parameter
Symbol
Min
Max
Unit
Note
Supply voltage DDR266/DDR333 (nominal VCC of 2.5V)
VCC
2.3
2.7
I/O Supply voltage DDR266/DDR333 (nominal VCC of 2.5V)
VCCQ
2.3
2.7
V
I/O Reference voltage
VREF
0.49*VCCQ
0.51*VCCQ
V1
I/O Termination voltage
VTT
VREF-0.04
VREF+0.04
V
2
Input logic high voltage
VIH(DC)
VREF+0.15
VCCQ+0.30
V
Input logic low voltage
VIL(DC)
-0.3
VREF-0.15
V
Input voltage level, CK and CK#
VIN(DC)
-0.3
VCCQ+0.30
V
Input differential voltage, CK and CK#
VID(DC)
0.3
VCCQ+0.60
V
3
Input crossing point voltage, CK and CK#
VIX(DC)
0.3
VCCQ+0.60
V
Input leakage current
Addr, CAS#,
RAS#, WE#
II
-16
16
μA
CS#, CKE
-8
8
μA
CK, CK#
-8
8
μA
DM
-4
4
μA
Output leakage current
IOZ
-10
10
μA
Output high current (normal strength); VOUT = V +0.84V
IOH
-16.8
—
mA
Output high current (normal strength); VOUT = VTT -0.84V
IOL
16.8
—
mA
Output high current (half strength); VOUT = VTT +0.45V
IOH
-9
—
mA
Output high current (half strength); VOUT = VTT -0.45V
IOL
9—
mA
NOTES:
1.
VREF is expected to be equal to 0.5*VCCQ of the transmitting device, and to track variations in the DC level of the same. Peak to peak noise on VREF may not exceed ±2% of the DC
value
2.
VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and must track variations in the DC level of VREF
3.
VID is the magnitude of the difference between the input level on CK and the input level on CK#.
CAPACITANCE
VCC = 2.5V, VCCQ =2.5V, TA = 25°C, f = 1MHz
Parameter
Symbol
Min
Max
Unit
Input Capacitance (A0-A12, BA0-BA1, RAS#, CAS#, WE#)
CIN1
20
28
pF
Input Capacitance (CKE0, CKE1)
CIN2
12
16
pF
Input Capacitance (CS0#, CS1#)
CIN3
12
16
pF
Input Capacitance (CK0, CK0#, CK1, CK1#)
CIN4
12
16
pF
Input Capacitance (DM0-DM7)
CIN5
12
14
pF
Data and DQS input/output capacitance (DQ0-DQ63), CB0-7
COUT
12
14
pF
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| WV3EG216M64STSU335D4SG | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:256MB - 2x16Mx64 DDR SDRAM UNBUFFERED |
| WV3EG216M64STSU-D4 | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:256MB - 2x16Mx64 DDR SDRAM UNBUFFERED |
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