参数资料
型号: WV3HG32M72EER534AD6SF
厂商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分类: DRAM
英文描述: 32M X 72 DDR DRAM MODULE, 0.5 ns, DMA240
封装: LEAD FREE, DIMM-240
文件页数: 8/10页
文件大小: 179K
代理商: WV3HG32M72EER534AD6SF
WV3HG32M72EER-AD6
March 2005
Rev. 0
ADVANCED
7
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
AC TIMING PARAMETERS (cont'd)
0°C ≤ TCASE < +85°C; VCCQ = + 1.8V ± 0.1V, VCC = +1.8V ± 0.1V
AC CHARACTERISTICS
534
403
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
UNIT
Command
and
Address
Address and control input pulse width for each input
tIPW
0.6
tCK
Address and control input setup time
tIS
250
350
ps
Address and control input hold time
tIH
375
475
ps
CAS# to CAS# command delay
tCCD
22
tCK
ACTIVE to ACTIVE (same bank) command
tRC
55
ns
ACTIVE bank a to ACTIVE bank b command
tRRD
7.5
ns
ACTIVE to READ or WRITE delay
tRCD
15
ns
ACTIVE to PRECHARGE command
tRAS
40
70,000
40
70,000
ns
Internal READ to precharge command delay
tRTP
7.5
ns
6 Write recovery time
tWR
15
ns
Auto precharge write recovery + precharge time
tDAL
tWR + tRP
ns
Internal WRITE to READ command delay
tWTR
7.5
10
ns
PRECHARGE command period
tRP
15
ns
LOAD MODE command cycle time
tMRD
22
tCK
OCD Drive mode delay
tOIT
012012
ns
CKE low to CK,CK# uncertainty
tDELAY
tIS + tCK + tIH
ns
Refresh
REFRESH to REFRESH command interval
tRFC
105
70,000
105
70,000
ns
Average periodic refresh interval
tREFI
7.8
s
Self
Refresh
Exit self refresh to non-READ command
tXSNR
tRFC (MIN) + 10
ns
Exit self refresh to READ command
tXSRD
200
tCK
Exit self refresh timing reference
tISXR
250
350
ps
ODT
ODT turn-on delay
tAOND
2222
tCK
ODT turn-on
tAON
tAC (MIN)
tAC (MAX) +
1000
tAC (MIN)
tAC (MAX) +
1000
ps
ODT turn-off delay
tAOFD
2.5
tCK
ODT turn-off
tAOF
tAC (MIN)
tAC (MAX) +
600
tAC (MIN)
tAC (MAX) +
600
ps
ODT turn-on (power-down mode)
tAONPD
tAC (MIN) +
2000
2 x tCK +
tAC (MAX) +
1000
tAC (MIN) +
2000
2 x tCK +
tAC (MAX) +
1000
ps
ODT turn-off (power-down mode)
tAOFPD
tAC (MIN) +
2000
2.5 x tCK +
tAC (MAX) +
1000
tAC (MIN) +
2000
2.5 x tCK +
tAC (MAX) +
1000
ps
ODT to power-down entry latency
tANPD
33
tCK
ODT power-down exit latency
tAXPD
88
tCK
Power-Down
Exit active power-down to READ command, MR[bit12=0]
tXARD
22
tCK
Exit active power-down to READ command, MR[bit12=1]
tXARDS
6 - AL
tCK
A Exit precharge power-down to any non-READ command.
tXP
22
tCK
CKE minimum high/low time
tCKE
33
tCK
相关PDF资料
PDF描述
WED3EG7232S202JD3IMG 32M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
WED3EG7232S263JD3IMG 32M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
WF128K32-120G1UM5A 128K X 32 FLASH 5V PROM MODULE, 120 ns, CQFP68
WF128K32-70G1TC5 128K X 32 FLASH 5V PROM MODULE, 70 ns, CQFP68
WE32K32-150G2UIA 32K X 32 EEPROM 5V MODULE, 150 ns, CQFP68
相关代理商/技术参数
参数描述
WV3HG64M32EEU403D4IMG 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:256MB - 64Mx32 DDR2 SDRAM UNBUFFERED
WV3HG64M32EEU403D4ISG 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:256MB - 64Mx32 DDR2 SDRAM UNBUFFERED
WV3HG64M32EEU403D4MG 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:256MB - 64Mx32 DDR2 SDRAM UNBUFFERED
WV3HG64M32EEU403D4SG 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:256MB - 64Mx32 DDR2 SDRAM UNBUFFERED
WV3HG64M32EEU534D4IMG 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:256MB - 64Mx32 DDR2 SDRAM UNBUFFERED