参数资料
型号: X28HC64EMB-12
厂商: INTERSIL CORP
元件分类: DRAM
英文描述: 5 Volt, Byte Alterable EEPROM
中文描述: 8K X 8 EEPROM 5V, 120 ns, CQCC32
封装: LCC-32
文件页数: 11/24页
文件大小: 112K
代理商: X28HC64EMB-12
X28HC64
11
ENDURANCE AND DATA RETENTION
Parameter
Min.
Max.
Unit
Minimum Endurance
Data Retention
100,000
100
Cycles
Years
3857 PGM T05.3
POWER-UP TIMING
Symbol
Parameter
Typ.
(1)
Units
μ
s
ms
t
PUR(3)
t
PUW(3)
Power-up to Read Operation
Power-up to Write Operation
100
5
3857 PGM T06
CAPACITANCE
T
A
= +25
°
C, f = 1MHz, V
CC
= 5V
Symbol
Parameter
Max.
Units
Test Conditions
C
I/O(3)
C
IN(3)
Input/Output Capacitance
Input Capacitance
10
6
pF
pF
V
I/O
= 0V
V
IN
= 0V
3857 PGM T07.1
A.C. CONDITIONS OF TEST
Input Pulse Levels
0V to 3V
Input Rise and
Fall Times
Input and Output
Timing Levels
5ns
1.5V
3857 PGM T08.1
MODE SELECTION
CE
L
L
H
OE
L
H
X
WE
H
L
X
Mode
Read
Write
Standby and
Write Inhibit
Write Inhibit
Write Inhibit
I/O
Power
Active
Active
Standby
D
OUT
D
IN
High Z
X
X
L
X
X
H
3857 PGM T09
Note:
(3) This parameter is periodically sampled and not 100% tested.
EQUIVALENT A.C. LOAD CIRCUITS
SYMBOL TABLE
WAVEFORM
INPUTS
OUTPUTS
Must be
steady
Will be
steady
May change
from LOW
to HIGH
Will change
from LOW
to HIGH
May change
from HIGH
to LOW
Will change
from HIGH
to LOW
Don’t Care:
Changes
Allowed
N/A
Changing:
State Not
Known
Center Line
is High
Impedance
3857 FHD F22.3
5V
1.92K
30pF
OUTPUT
1.37K
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