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参数资料
| 型号： | X28HC64FMB-70 |
| 厂商： | INTERSIL CORP |
| 元件分类： | DRAM |
| 英文描述： | 5 Volt, Byte Alterable EEPROM |
| 中文描述： | 8K X 8 EEPROM 5V, 70 ns, CDFP28 |
| 封装： | FP-28 |
| 文件页数： | 9/24页 |
| 文件大小： | 112K |
| 代理商： | X28HC64FMB-70 |
X28HC64
9
SYSTEM CONSIDERATIONS
Because the X28HC64 is frequently used in large memory
arrays, it is provided with a two line control architecture
for both read and write operations. Proper usage can
provide the lowest possible power dissipation and elimi-
nate the possibility of contention where multiple I/O pins
share the same bus.
To gain the most benefit it is recommended that
CE
be
decoded from the address bus and be used as the
primary device selection input. Both
OE
and
WE
would
then be common among all devices in the array. For a
read operation, this assures that all deselected devices
are in their standby mode and that only the selected
device(s) is outputting data on the bus.
Because the X28HC64 has two power modes, standby
and active, proper decoupling of the memory array is of
prime concern. Enabling
CE
will cause transient current
spikes. The magnitude of these spikes is dependent on
the output capacitive loading of the I/Os. Therefore, the
larger the array sharing a common bus, the larger the
transient spikes. The voltage peaks associated with the
current transients can be suppressed by the proper
selection and placement of decoupling capacitors. As a
minimum, it is recommended that a 0.1
μ
F high fre-
quency ceramic capacitor be used between V
CC
and
V
SS
at each device. Depending on the size of the array,
the value of the capacitor may have to be larger.
In addition, it is recommended that a 4.7
μ
F electrolytic
bulk capacitor be placed between V
CC
and V
SS
for each
eight devices employed in the array. This bulk capacitor
is employed to overcome the voltage droop caused by
the inductive effects of the PC board traces.
Normalized I
CC
(RD) by Temperature
Over Frequency
Normalized I
CC
(RD) @ 25% Over
the V
CC
Range and Frequency
1.4
1.2
0.8
0.4
0.6
0.2
1.0
0
10
20
- 55
°
C
+ 25
°
C
+ 125
°
C
IC
N
FREQUENCY (MHz)
3857 FHD F20.1
5.5 VCC
1.4
1.2
0.8
0.4
0.6
0.2
1.0
0
10
20
IC
N
FREQUENCY (MHz)
3857 FHD F21.1
4.5 VCC
5.0 VCC
5.5 VCC
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PDF描述 |
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| X28HC64FMB-90 | 5 Volt, Byte Alterable EEPROM |
| X28HC64KMB-90 | 5 Volt, Byte Alterable EEPROM |
| X28HC64PI-70 | 5 Volt, Byte Alterable EEPROM |
| X28HC64PI-90 | 5 Volt, Byte Alterable EEPROM |
| X28HC64PMB-70 | 5 Volt, Byte Alterable EEPROM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| X28HC64FMB-90 | 制造商:XICOR 制造商全称:Xicor Inc. 功能描述:5 Volt, Byte Alterable E2PROM |
| X28HC64J-12 | 制造商:Intersil Corporation 功能描述:EEPROM PARALLEL 64KBIT 8KX8 5V 32PLCC - Rail/Tube |
| X28HC64J-12T1 | 功能描述:电可擦除可编程只读存储器 8K X 8 电可擦除可编程只读存储器,CMOS,32 LEAD PLCC,COMM,T&R,120NS RoHS:否 制造商:Intersil 存储容量: 组织: 数据保留: 最大时钟频率: 最大工作电流: 工作电源电压: 最大工作温度: 安装风格: 封装 / 箱体: |
| X28HC64J-50 | 制造商:XICOR 制造商全称:Xicor Inc. 功能描述:5 Volt, Byte Alterable E2PROM |
| X28HC64J-55 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 EEPROM |
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