参数资料
型号: XBS306S17R-G
厂商: Torex Semiconductor Ltd
文件页数: 1/3页
文件大小: 100K
描述: DIODE SCHOTTKY 30V 3A DO214
标准包装: 1,500
二极管类型: 肖特基
电压 - (Vr)(最大): 60V
电流 - 平均整流 (Io): 3A
电压 - 在 If 时为正向 (Vf)(最大): 660mV @ 3A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 55ns
电流 - 在 Vr 时反向漏电: 300µA @ 60V
电容@ Vr, F: 195pF @ 1V,1MHz
安装类型: 表面贴装
封装/外壳: DO-214AC,SMA
供应商设备封装: SMA
包装: 带卷 (TR)
TOIRE>(XBS3o6S17R-G em
Schottky Barrier Diode, 3A, 60V Type
I FEATURES
Forward Voltage : vF=0.59v (TYP.)
: |F(AVE)=3A
Repetitive Peak Reverse Voltage : VRM=60V
Forward Current
IABSOLUTE MAXIMUM RATINGSTa=25DC
Non Continuous
*1 : Non continuous high ampIitude 60Hz haIr—sine wave.
IMARKING RULE| | ???@?C6): 306S17(ProdUCt Number)IPRODUCTNAME
?? :Assembiy Lot Number????
PRODUCT NAME
XBS306s17 R-G
XBs306s17 R
IAPPUCMIONS
OReCtificatiOn
OProtectiOn against reverse Connection of battery
IPACKAGING INFORMATION
339-4 50
Cathode Bar
0 127max
SMA Umt mm
‘ The “-G" sutfIx indicates that the products are Halogen and Antimony tree as weii as being iuliy ROHS Compliant.
‘ The devICe orIentatIon is ?xed In Its embossed tape pocket.
IELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITIONS
|F=20[J it A
FOnNard Voltage
Reverse Current
Inter-Terminai Capacity
VR=1V , f=1MHZ
Reverse Recovew Time?
IF=IR=10mA , irr=1mA
*2 : trr measurement circuit
Pulse Generatrix
Device Under test
Oscilioscope
1/3
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