参数资料
型号: XCS30-3VQ208I
厂商: Xilinx, Inc.
英文描述: Spartan and Spartan-XL Families Field Programmable Gate Arrays
中文描述: 斯巴达和Spartan - xL的家庭现场可编程门阵列
文件页数: 53/82页
文件大小: 863K
代理商: XCS30-3VQ208I
Spartan and Spartan-XL Families Field Programmable Gate Arrays
DS060 (v1.6) September 19, 2001
Product Specification
1-800-255-7778
R
Spartan-XL CLB RAM Synchronous (Edge-Triggered) Write Operation Guidelines (cont.)
Testing of switching parameters is modeled after testing
methods specified by MIL-M-38510/605. All devices are
100% functionally tested. Internal timing parameters are
derived from measuring internal test patterns. Listed below
are representative values. For more specific, more precise,
and worst-case guaranteed data, use the values reported
by the static timing analyzer (TRCE in the Xilinx Develop-
ment System) and back-annotated to the simulation netlist.
All timing parameters assume worst-case operating condi-
tions (supply voltage and junction temperature). Values
apply to all Spartan-XL devices and are expressed in nano-
seconds unless otherwise noted.
Spartan-XL CLB RAM Synchronous (Edge-Triggered) Write Timing
Symbol
Dual Port RAM
Size
-5
-4
Units
Min
Max
Min
Max
Write Operation(1)
TWCDS
Address write cycle time (clock K period)
16x1
7.7
-
8.4
-
ns
TWPDS
Clock K pulse width (active edge)
16x1
3.1
-
3.6
-
ns
TASDS
Address setup time before clock K
16x1
1.3
-
1.5
-
ns
TDSDS
DIN setup time before clock K
16x1
1.7
-
2.0
-
ns
TWSDS
WE setup time before clock K
16x1
1.4
-
1.6
-
ns
All hold times after clock K
16x1
0
-
0
-
ns
TWODS
Data valid after clock K
16x1
-
5.2
-
6.1
ns
Notes:
1.
Read Operation timing for 16 x 1 dual-port RAM option is identical to 16 x 2 single-port RAM timing
Single Port
Dual Port
WCLK (K)
WE
ADDRESS
DATA IN
DATA OUT
OLD
NEW
TDSS
TDHS
TASS
TAHS
TWSS
TWPS
TWHS
TWSDS
TWHDS
TWOS
TILO
DS060_34_011300
WCLK (K)
WE
ADDRESS
DATA IN
DATA OUT
OLD
NEW
TDSDS
TDHDS
TASDS
TAHDS
TWPDS
TWODS
TILO
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