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参数资料
| 型号： | XP134A11A1SR |
| 厂商： | TOREX SEMICONDUCTOR LTD. |
| 英文描述： | P-Channel Power MOS FET |
| 中文描述： | P沟道功率MOS场效应管 |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 代理商： | XP134A11A1SR |
u
8D1
1
S1
5D2
4
G2
6D2
3
S2
7D1
2
G1
x P-Channel Power MOS FET
x DMOS Structure
x Low On-State Resistance: 0.11 MAX
x Ultra High-Speed Switching
x SOP-8 Package
x Two FET Devices built-in
s Applications
q Notebook PCs
q Cellular and portable phones
q On-board power supplies
q Li-ion battery systems
s General Description
The XP134A11A1SR is a P-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Two FET devices are built into the one package.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
s Features
Low on-state resistance: Rds(on)=0.065
(Vgs=-10V)
Rds(on)=0.11
(Vgs=-4.5V)
Ultra high-speed switching
Operational Voltage: -4.5V
High density mounting: SOP-8
s Absolute Maximum Ratings
s Equivalent Circuit
s Pin Configuration
P-Channel MOS FET
(2 devices built-in)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
-30
±20
-4
-16
-4
2
150
-55~150
V
A
W
:
SYMBOL
RATINGS
UNITS
s Pin Assignment
PIN
NUMBER
PIN
NAME
FUNCTION
1
3
2
S1
S2
G1
Source
Gate
4
7~8
5~6
G2
D1
D2
Gate
Drain
8
1
5
4
6
3
7
2
SOP-8
(TOP VIEW)
Ta=25
:
When implemented on a glass epoxy PCB
Note:
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相关代理商/技术参数 |
参数描述 |
|---|---|
| XP134A11A1SR_1 | 制造商:TOREX 制造商全称:Torex Semiconductor 功能描述:Power MOSFET |
| XP134A1275SR | 制造商:TOREX 制造商全称:Torex Semiconductor 功能描述:Power MOSFET |
| XP134A1275SR_1 | 制造商:TOREX 制造商全称:Torex Semiconductor 功能描述:Power MOSFET |
| XP135A1145SR | 制造商:TOREX 制造商全称:Torex Semiconductor 功能描述:POWER MOSFET |
| XP135A1145SR_1 | 制造商:TOREX 制造商全称:Torex Semiconductor 功能描述:Power MOSFET |
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