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| 型号： | XRD87L75AIUTR-F |
| 厂商： | Exar Corporation |
| 文件页数： | 10/15页 |
| 文件大小： | 0K |
| 描述： | IC ADC 8BIT 10MSPS 20SSOP |
| 产品变化通告： | Packaging Change 15/Jul/2010 |
| 标准包装： | 1,500 |
| 位数： | 8 |
| 采样率（每秒）： | 10M |
| 数据接口： | 并联 |
| 转换器数目： | 1 |
| 功率耗散（最大）： | 650mW |
| 电压电源： | 模拟和数字 |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-SSOP（0.209"，5.30mm 宽） |
| 供应商设备封装： | 20-SSOP |
| 包装： | 带卷 (TR) |
| 输入数目和类型： | * |
XRD87L75
4
Rev. 1.00
ELECTRICAL CHARACTERISTICS TABLE (CONT'D)
UNLESS OTHERWISE SPECIFIED: AV
DD = DVDD = 3.3V, FS = 6MHz (50% DUTY CYCLE),
V
RT = 2.5V, VRB = 0.5V, TA = 25°C
25°C
Parameter
Symbol
Min
Typ
Max
Units
Test Conditions/Comments
ACPARAMETERS
Differential Gain Error
d
G
2
%
FS = 4 x NTSC
Differential Phase Error
d
PH
1
Degree
FS = 4 x NTSC
POWER SUPPLIES
Operating Voltage (AV
DD, DVDD)
9
V
DD
3
3.3
3.6
V
Current (AGND + DGND)
I
DD
8
12
mA
Does not include ref. current
NOTES
1. The difference between the measured and the ideal code width (V
REF/256) is the DNL error (Figure 3). The INL error is the maximum distance (in LSBs) from the best fit line to any transition
voltage (Figure 4). Accuracy is a function of the sampling rate (FS).
2. Guaranteed, not tested.
3. Specified values guarantee functionality. Refer to other parameters for accuracy.
4. –1dB bandwidth is a measure of performance of the A/D input stage (S/H + amplifier). Refer to other parameters for accuracy within the specified bandwidth.
5. See V
IN input equivalent circuit (Figure 5). Switched capacitor analog input requires driver with low output resistance.
6. All inputs have diodes to DV
DD and DGND. Input DC currents will not exceed specified limits for any input voltage between DGND and DVDD .
7. t
R , tF should be limited to >5ns for best results.
8. Depends on the RC load connected to the output pin.
9. AGND & DGND pins are connected through the silicon substrate. Connect together at the package and to the analog ground plane.
Specifications are subject to change without notice
ABSOLUTE MAXIMUM RATINGS (T
A = +25
°C unless otherwise noted)1, 2, 3
V
DD to GND ....................................................... 5.5V
V
RT & V RB ......................... VDD +0.5 to GND –0.5V
V
IN
..................................... V
DD +0.5 to GND –0.5V
All Inputs ............................ V
DD +0.5 to GND –0.5V
All Outputs ......................... V
DD +0.5 to GND –0.5V
Storage Temperature .........................–65 to +150°C
Lead Temperature (Soldering 10 seconds) ... +300°C
Package Power Dissipation Rating @ 75°C
PDIP, SOIC, SSOP .............................. 650mW
Derates above 75°C ............................. 9mW/°C
NOTES:
1. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation at or above this specification
is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
2. Any input pin which can see a value outside the absolute maximum ratings should be protected by Schottky diode clamps (HP5082-2835) from input pin to the supplies. All inputs have protection
diodes which will protect the device from short transients outside the supplies of less than 100
A for less than 100ms.
3. V
DD refers to AVDD and DVDD. GND refers to AGND and DGND.
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