参数资料
型号: YG233N2
厂商: FUJI ELECTRIC CO LTD
元件分类: 整流器
英文描述: 8 A, 200 V, SILICON, RECTIFIER DIODE
封装: SC-67, 3 PIN
文件页数: 1/3页
文件大小: 65K
代理商: YG233N2
YG233C2,N2,D2 (8A)
(200V / 8A)
FAST RECOVERY DIODE
Outline drawings, mm
Item
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Isolating voltage
Average output current
Surge current
Operating junction temperature
Storage temperature
Symbol
VRRM
VRSM
Viso
IO
IFSM
Tj
Tstg
Conditions
30
+150
-40 to +150
Unit
V
A
°C
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Forward voltage drop **
Reverse current
**
Reverse recovery time
Thermal resistance
Symbol
VFM
IRRM
trr
Rth(j-c)
Conditions
IFM=2.0A
VR=VRRM
IF=0.1A, IR=0.1A
Junction to case
Max.
1.4
500
0.1
3.5
Unit
V
A
s
°C/W
Square wave, duty=1/2, Tc=95°C
Sine wave 10ms
Rating
200
1500
8*
Connection diagram
*Average forward current of centertap full wave connection
JEDEC
EIAJ
SC-67
10±0.5
2.54±0.2
0.7±0.2
1.2±0.2
2.7±0.2
0.6
2.7±0.2
4.5±0.2
3.7
±0.2
15
±0.3
2.7
±0.2
13
Min
6.3
3.2
+0.2
-0.1
+0.2
-0
Applications
High speed switching
Maximum ratings and characteristics
Absolute maximum ratings
Features
Insulated package by fully molding
High voltage by mesa design
High reliability
Mechanical characteristics
Mounting torque
Approximate weight
Nm
g
0.3 to 0.5
2.3
Recommended torque
** Rating per element
Terminals-to-Case, AC.1min
YG233C2
YG233N2
YG233D2
1
2
3
1
2
3
”p^@í
Discontinued
product.
相关PDF资料
PDF描述
YG233C2 8 A, 200 V, SILICON, RECTIFIER DIODE
YG233D2 8 A, 200 V, SILICON, RECTIFIER DIODE
YG339C4 5 A, 400 V, SILICON, RECTIFIER DIODE
YG339N4 5 A, 400 V, SILICON, RECTIFIER DIODE
YG339D4 5 A, 400 V, SILICON, RECTIFIER DIODE
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