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参数资料
| 型号： | YG801C09R |
| 元件分类： | 整流器 |
| 英文描述： | 2.5 A, 90 V, SILICON, RECTIFIER DIODE |
| 封装： | SC-67, TO-220F15, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 51K |
| 代理商： | YG801C09R |
YG801C09R
(90V / 5A TO-22OF15)
Characteristics
0.1
1
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Tj=150
o
C
Tj=125
o
C
Tj=100
o
C
Tj=25
o
C
Forward Characteristic
(typ.)
IF
Forward
Current
(A)
VF
Forward Voltage (V)
0
10
20
304050607080
90
100 110
10
-3
10
-2
10
-1
10
0
10
1
Tj=150
o
C
Tj=25
o
C
Tj=100
o
C
Tj=125
oC
Reverse Characteristic (typ.)
IR
Reverse
Current
(mA)
VR
Reverse Voltage (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Per 1element
DC
Square wave
λ=180
o
Sine wave
λ=180
o
Square wave
λ=120
o
Square wave
λ=60
o
Forward Power Dissipation
WF
Forward
Power
Dissipation
(W)
Io
Average Forward Current
(A)
360°
Io
λ
0
204060
80
100
0
2
4
6
8
10
12
14
Reverse Power Dissipation
α=180
o
DC
PR
Reverse
Power
Dissipation
(W)
VR
Reverse Voltage
(V)
360°
VR
0
1
2
345678
80
90
100
110
120
130
140
150
160
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Square wave
λ=120
o
Square wave
λ=60
o
Square wave
λ=180
o
Sine wave
λ=180
o
DC
Current Derating (Io-Tc)
Tc
Case
Temperature
(
o
C)
Io
Average Output Current
(A)
VR=50V
360°
λ
Io
10
100
10
100
1000
Junction Capacitance Characteristic
(typ.)
Cj
Junction
Capacitance
(pF)
VR
Reverse Voltage (V)
α
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相关代理商/技术参数 |
参数描述 |
|---|---|
| YG801C10R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:SCHOTTKY BARRIER DIODE |
| YG802C03R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SCHOTTKY BARRIER DIODE |
| YG802C03RSC-P | 制造商:Fuji Electric 功能描述: |
| YG802C04 | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:SCHOTTKY BARRIER DIODE |
| YG802C04R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:SCHOTTKY BARRIER DIODE |
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