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参数资料
| 型号： | YG801C10R |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | 整流器 |
| 英文描述： | 5 A, 100 V, SILICON, RECTIFIER DIODE |
| 封装： | SC-67, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 54K |
| 代理商： | YG801C10R |
YG801C10R
(100V / 5A TO-22OF15)
Characteristics
0.1
1
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Tj=150
o
C
Tj=125
oC
Tj=100
oC
Tj=25
o
C
Forward Characteristic (typ.)
IF
Forward
Current
(A)
VF
Forward Voltage (V)
0
10
203040
5060
70
8090
100
110
10
-3
10
-2
10
-1
10
0
10
1
10
2
Tj=150
o
C
Tj=25
o
C
Tj=100
o
C
Tj=125
o
C
Reverse Characteristic (typ.)
IR
Reverse
Current
(mA)
VR
Reverse Voltage (V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Per 1element
DC
Square wave
λ=180
o
Sine wave
λ=180
o
Square wave
λ=120
o
Square wave
λ=60
o
Forward Power Dissipation
WF
Forward
Power
Dissipation
(W)
Io
Average Forward Current (A)
360°
Io
λ
0
10203040
50
60708090
100
110
0
1
2
3
4
5
6
7
8
9
10
Reverse Power Dissipation
α=180
o
DC
PR
Reverse
Power
Dissipation
(W)
VR
Reverse Voltage (V)
360°
VR
α
0
1234
5678
80
90
100
110
120
130
140
150
160
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Square wave
λ=120
o
Square wave
λ=60
o
Square wave
λ=180
o
Sine wave
λ=180
o
DC
Current Derating (Io-Tc)
Tc
Case
Temperature
(
o
C)
Io
Average Output Current (A)
VR=50V
360°
λ
Io
10
100
10
100
1000
Junction Capacitance Characteristic (typ.)
Cj
Junction
Capacitance
(pF)
VR
Reverse Voltage (V)
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| YG802C03R | SCHOTTKY BARRIER DIODE |
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| YG802C06 | 5 A, 60 V, SILICON, RECTIFIER DIODE |
| YG802C09R | SCHOTTKY BARRIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| YG802C03R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SCHOTTKY BARRIER DIODE |
| YG802C03RSC-P | 制造商:Fuji Electric 功能描述: |
| YG802C04 | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:SCHOTTKY BARRIER DIODE |
| YG802C04R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:SCHOTTKY BARRIER DIODE |
| YG802C04R_01 | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:SCHOTTKY BARRIER DIODE |
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