参数资料
型号: YG802C04R
厂商: FUJI ELECTRIC CO LTD
元件分类: 整流器
英文描述: SCHOTTKY BARRIER DIODE
中文描述: 10 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB
封装: SC-67, TO-220F15, 3 PIN
文件页数: 2/3页
文件大小: 52K
代理商: YG802C04R
YG802C04R
(40V / 10A TO-22OF15)
Characteristics
0.1
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Tj=150
o
C
Tj=125
o
C
Tj=100
o
C
Tj=25
o
C
Forward Characteristic (typ.)
IF
Forward
Current
(A)
VF
Forward Voltage (V)
0
1020
3040
50
10
-3
10
-2
10
-1
10
0
10
1
10
2
Tj=150
o
C
Tj=25
o
C
Tj=100
o
C
Tj=125
o
C
Reverse Characteristic (typ.)
IR
Reverse
Current
(mA)
VR
Reverse Voltage (V)
012
345
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
Per 1element
DC
Square wave
λ=180
o
Sine wave
λ=180
o
Square wave
λ=120
o
Square wave
λ=60
o
Forward Power Dissipation
WF
Forward
Power
Dissipation
(W)
Io
Average Forward Current
(A)
360°
Io
0
5
10
15
20
25
30
35
40
45
50
0
2
4
6
8
10
12
Reverse Power Dissipation
α=180
o
DC
PR
Reverse
Power
Dissipation
(W)
VR
Reverse Voltage
(V)
360°
VR
0
2
4
6
8
10
121416
50
60
70
80
90
100
110
120
130
140
150
160
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Square wave
λ=120
o
Square wave
λ=60
o
Square wave
λ=180
o
Sine wave
λ=180
o
DC
Current Derating (Io-Tc)
Tc
Case
Temperature
(
o
C)
Io
Average Output Current
(A)
VR=30V
Io
360°
1
10
100
1000
Junction Capacitance Characteristic
(typ.)
Cj
Junction
Capacitance
(pF)
VR
Reverse Voltage
(V)
λ
α
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