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参数资料
| 型号： | YG811S06R |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | SCHOTTKY BARRIER DIODE |
| 中文描述： | 肖特基势垒二极管 |
| 文件页数： | 1/3页 |
| 文件大小： | 52K |
| 代理商： | YG811S06R |
YG811S06R
(60V / 5A TO-22OF15)
SCHOTTKY BARRIER DIODE
Outline Drawings
JEDEC
EIAJ
SC-67
Features
Low VF
Super high speed switching.
High reliability by planer design.
Applications
High speed power switching.
Connection Diagram
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Item
Repetitive peak reverse voltage
Repetitive peak surge reverse voltage
Isolation voltage
Average output current
Surge current
Operating junction temperature
Storage temperature
Symbol
VRRM
VRSM
Viso
IO
IFSM
Tj
Tstg
Conditions
duty=1/2, Tc=127°C
Rectangl wave
Sine wave 10ms
Rating
60
1500
5
80
-40 to +150
Unit
V
A
°C
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Item
Forward voltage drop
Reverse current
Thermal resistance
Symbol
VF
IR
Rth(j-c)
Conditions
IF=5.0A
VR=VRRM
Junction to case
Max.
0.59
5.0
Unit
V
mA
°C/W
tw=500ns, duty=1/40
Terminals to Case,
AC. 1min.
Mechanical Characteristics
Mounting torque
Weight
Recommended torque
0.3 to 0.5
2.3
N m
g
1
3
10.5±0.5
0.7±0.2
1.2±0.2
2.7±0.2
0.6±0.2
2.7±0.2
4.5±0.2
3.7
±0.2
15
±0.3
2.7
±0.2
13
Min
6.3
3.2
+0.2
-0.1
5.08±0.4
相关PDF资料 |
PDF描述 |
|---|---|
| YG811S06R | 5 A, 60 V, SILICON, RECTIFIER DIODE |
| YG811S09R | SCHOTTKY BARRIER DIODE |
| YG811S09R | 5 A, 90 V, SILICON, RECTIFIER DIODE |
| YG811S09 | 5 A, 90 V, SILICON, RECTIFIER DIODE, TO-220 |
| YG811S09 | 5 A, 90 V, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| YG811S06RSC-P | 制造商:Fuji Electric 功能描述: |
| YG811S09R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SCHOTTKY BARRIER DIODE |
| YG811S09RSC-P | 制造商:Fuji Electric 功能描述: |
| YG812S04R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Schottky Barrier Diode |
| YG812S04RSC-P | 制造商:Fuji Electric 功能描述: |
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