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参数资料
| 型号： | YG838C03R |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 4.0 to 4.4; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
| 中文描述： | 肖特基二极管 |
| 文件页数： | 1/3页 |
| 文件大小： | 76K |
| 代理商： | YG838C03R |
Type name
Polarity mark
TO-220F
YG838C03R (30A)
(30V / 30A )
Features
Low VF
Super high speed switching
High reliability by planer design
Applications
High speed power switching
Maximum ratings and characteristics
Absolute maximum ratings
Item
Repetitive peak reverse voltage
Repetitive peak surgereverse voltage
Average output current
Surge current
Operating junction temperature
Storage temperature
Symbol
VRRM
VRSM
Io
IFSM
Tj
Tstg
Conditions
Sine wave
10ms
180
-40 to +150
Unit
V
A
°C
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Forward voltage drop
Reverse current
Thermal resistance
Symbol
VFM
IRRM
Rth(j-c)
Conditions
IFM=12.5A
VR=VRRM
Junction to case
Max.
0.53
8
2.0
Unit
V
mA
°C/W
tw=500ns, duty=1/40
Square wave, duty=1/2
Tc=85°C
Rating
30
35
30*
SCHOTTKY BARRIER DIODE
Outline drawings, mm
Connection diagram
1
3
2
* Average forward current of centertap full wave connection
相关PDF资料 |
PDF描述 |
|---|---|
| YG838C03R | 38 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB |
| YG838C04R | 30 A, 40 V, SILICON, RECTIFIER DIODE |
| YG858C12R | 120 V, SILICON, RECTIFIER DIODE |
| YG858C15R | 150 V, SILICON, RECTIFIER DIODE |
| YG861S15R | 5 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| YG838C03RSC-P | 制造商:Fuji Electric 功能描述: |
| YG838C04R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:SCHOTTKY BARRIER DIODE |
| YG838C04RSC-P | 制造商:Fuji Electric 功能描述: |
| YG852C12R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Schottky Barrier Diode |
| YG852C15R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Schottky Barrier Diode |
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