参数资料
型号: YG862C04R
厂商: FUJI ELECTRIC CO LTD
元件分类: 整流器
英文描述: 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
封装: PLASTIC, TO-220F, 3 PIN
文件页数: 2/3页
文件大小: 128K
代理商: YG862C04R
YG862C04R (10A)
Characteristics
(45V / 10A )
0.1
1
10
0.10.2
0.3
0.4
0.50.6
0.70.8
0.9
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
Forward Characteristic (typ.)
IF
Fo
rwa
rd
Cu
rre
nt
(A
)
VF Forward Voltage (V)
0
1020304050
60
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Tj=150°C
Reverse Characteristic (typ.)
Tj= 25°C
Tj=100°C
Tj=125°C
IR
Re
ve
rse
Cu
rre
nt
(m
A
)
VR Reverse Voltage (V)
012
3456
0
1
2
3
4
5
6
Square wave λ=180°
Sine wave λ=180°
Square wave λ=120°
Square wave λ=60°
Per 1element
DC
Forward Power Dissipation (max.)
W
F
or
w
ar
dPow
e
r
D
issi
pa
tio
n
(W
)
Io Average Output Current (A)
123456789012345
360
λ
Io
0
1020304050
60
0
1
2
3
α=180°
Reverse Power Dissipation (max.)
DC
P
R
e
ve
rs
e
Pow
er
D
is
si
pati
on
(
W
)
VR Reverse Voltage (V)
1234
360
VR
α
05
10
15
110
115
120
125
130
135
140
145
150
155
T
c
C
as
e
T
e
mpe
ra
tur
e
(
°C
)
Square wave λ=120°
Sine wave λ=180°
Square wave λ=180°
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
DC
Current Derating (Io-Tc) (max.)
VR=20V
1234567890123456
360
λ
Io
1
10
100
1000
10
100
1000
Junction Capacitance Characteristic (max.)
C
j
J
unc
tion
C
a
pac
itanc
e
(
pF
)
VR Reverse Voltage (V)
相关PDF资料
PDF描述
YG862C06R 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB
YG862C08R 80 V, SILICON, RECTIFIER DIODE, TO-220AB
YG862C10R 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
YG862C12R 10 A, 120 V, SILICON, RECTIFIER DIODE, TO-220AB
YG865C04R 20 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
相关代理商/技术参数
参数描述
YG862C06R 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Low IR Schottky barrier diode
YG862C06RSC-P 制造商:Fuji Electric 功能描述:
YG862C08R 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Schottky Barrier Diode
YG862C10R 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Low IR Schottky barrier diode
YG862C10RSC-P 制造商:Fuji Electric 功能描述: