- 您现在的位置：买卖IC网 > PDF目录40934 > YG864S06R (FUJI ELECTRIC CO LTD) 60 V, SILICON, RECTIFIER DIODE PDF资料下载
参数资料
| 型号： | YG864S06R |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | 整流器 |
| 英文描述： | 60 V, SILICON, RECTIFIER DIODE |
| 文件页数： | 1/6页 |
| 文件大小： | 551K |
| 代理商： | YG864S06R |
1
YG864S06R
Maximum Rating and Characteristics
Maximum ratings (at Ta=25C unless otherwise specified.)
Item
Symbols
Conditions
Ratings
Units
Repetitive peak reverse voltage
VRRM
-
60
V
Isolating voltage
Viso
Terminals-to-case, AC.1min
1500
V
Average forward current
IFAV
50Hz Square wave duty =1/2
Tc = 101C
15
A
Non-repetitive forward surge current
IFSM
Sine wave, 10ms 1shot
160
A
Operating junction temperature
Tj
-
150
C
Storage temperature
Tstg
-
-40 to +150
C
Electrical characteristics (at Ta=25C unless otherwise specified.)
Item
Symbols
Conditions
Maximum
Units
Forward voltage
VF
IF =15 A
0.74
V
Reverse current
IR
VR =VRRM
200
A
Thermal resistance
Rth(j-c)
Junction to case
3.5
C/W
http://www.fujisemi.com
FUJI Diode
Mechanical characteristics
Item
Conditions
Maximum
Units
Mounting torque
Recommended torque
0.3 to 0.5
Nm
Approximate mass
-
1.7
g
Schottky Barrier Diode
相关PDF资料 |
PDF描述 |
|---|---|
| YG865C06R | 20 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
| YG865C10R | 20 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| YG865C12R | 20 A, 120 V, SILICON, RECTIFIER DIODE, TO-220AB |
| YG868C12R | 30 A, 120 V, SILICON, RECTIFIER DIODE, TO-220AB |
| YG868C15R | 30 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| YG865C04R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Low IR Schottky barrier diode |
| YG865C06R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Low IR Schottky barrier diode |
| YG865C06RSC-P | 制造商:Fuji Electric 功能描述: |
| YG865C08R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Schottky Barrier Diode |
| YG865C10R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Low IR Schottky barrier diode |
发布紧急采购，3分钟左右您将得到回复。