参数资料
型号: YG865C08R
厂商: FUJI ELECTRIC CO LTD
元件分类: 整流器
英文描述: 20 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB
封装: PLASTIC, TO-220F, 3 PIN
文件页数: 1/6页
文件大小: 545K
代理商: YG865C08R
1
YG865C08R
Maximum Rating and Characteristics
Maximum ratings (at Ta=25C unless otherwise specified.)
Item
Symbols
Conditions
Ratings
Units
Repetitive peak reverse voltage
VRRM
-
80
V
Isolating voltage
Viso
Terminals-to-case, AC.1min
1500
V
Average output current
Io
50Hz Square wave duty =1/2
Tc = 89C
20*
A
Non-repetitive forward surge current**
IFSM
Sine wave, 10ms 1shot
145
A
Operating junction temperature
Tj
-
150
C
Storage temperature
Tstg
-
-40 to +150
C
Note* Out put current of center tap full wave connection.
Note** Rating per element
Electrical characteristics (at Ta=25C unless otherwise specified.)
Item
Symbols
Conditions
Maximum
Units
Forward voltage***
VF
IF =10 A
0.76
V
Reverse current***
IR
VR =VRRM
175
A
Thermal resistance
Rth(j-c)
Junction to case
2.5
C/W
Note*** Rating per element
http://www.fujisemi.com
FUJI Diode
Mechanical characteristics
Item
Conditions
Maximum
Units
Mounting torque
Recommended torque
0.3 to 0.5
Nm
Approximate mass
-
1.7
g
Schottky Barrier Diode
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