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参数资料
| 型号： | YG868C06R |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | 整流器 |
| 英文描述： | 30 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | PLASTIC, TO-220F, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 130K |
| 代理商： | YG868C06R |
YG868C06R (30A)
Characteristics
(60V / 30A )
0.01
0.1
1
10
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Tj=150
oC
Tj=125
oC
Tj=100
oC
Tj=25
oC
Forward Characteristic (typ.)
IF
F
or
w
ar
dC
ur
re
n
t
(
A
)
VF Forward Voltage (V)
0
102030
4050
6070
80
10
-3
10
-2
10
-1
10
0
10
1
Reverse Characteristic (typ.)
Tj= 25
oC
Tj=100
oC
Tj=125
oC
Tj=150
oC
IR
R
e
ve
rs
eC
ur
rent
(m
A
)
VR Reverse Voltage (V)
-2
0
2
4
6
8
10
12
14
16
18
-2
0
2
4
6
8
10
12
14
16
18
20
22
24
Per 1element
DC
Square wave λ=180
o
Sine wave λ=180
o
Square wave λ=120
o
Square wave λ=60
o
Forward Power Dissipation (max.)
W
F
o
rw
a
rd
Pow
er
D
is
si
pa
tion
(
W
)
Io Average Forward Current (A)
123456789012345
360
λ
Io
0
1020
304050607080
0
1
2
3
4
5
6
7
Reverse Power Dissipation (max.)
α=180
o
DC
PR
R
ev
er
se
Pow
er
D
is
si
p
ati
on
(
W
)
VR Reverse Voltage (V)
1234
360
VR
α
0
5
10
15
20
25
30
35
40
45
50
60
70
80
90
100
110
120
130
140
150
α:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Square wave λ=120
o
Square wave λ=60
o
Square wave λ=180
o
Sine wave λ=180
o
DC
Current Derating (Io-Tc) (max.)
T
c
C
a
se
T
em
pe
ra
tur
e
(
o C)
Io Average Output Current (A)
VR=30V
1234567890123456
360
λ
Io
1
10
100
1000
10
100
1000
Junction Capacitance Characteristic (max.)
C
j
J
u
nc
tion
Ca
pa
ci
ta
nc
e
(p
F
)
VR Reverse Voltage (V)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| YG868C06RSC-P | 制造商:Fuji Electric 功能描述: |
| YG868C08R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Schottky Barrier Diode |
| YG868C08RSC-P | 制造商:Fuji Electric 功能描述: |
| YG868C10R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Low IR Schottky barrier diode |
| YG868C10RSC-P | 制造商:Fuji Electric 功能描述: |
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