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MS5D3283 3/12
H04-004-03a
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1. SCOPE
This specification provides the ratings and the test requirement for FUJI SILICON DIODE
YG868C08R
2.TYPE NAME,ORDERING TYPE NAME,COUNTRY CODE,PACKAGING ASSEMBLY LOCATION
Type name
Ordering type name
Country code
Packaging assembly location
YG868C08R
Blank
Japan
YG868C08R
YG868C08R-P
P
Philippines
3.ORDERING TYPE NAME,PACKAGE TYPE,OUT VIEW MARKING,MOLDING RESIN, CHARACTERISTICS
Ordering type name
Package type
Out view Marking
Molding resin
Characteristics
YG868C08R
Page
9/12
YG868C08R-P
TO-220F
Page
9/12
UL:V-0
Page
10/12
12/12
Bar code label of
EIAJ C-3 specification.
Indispensable description items are shown as below.
(1) Type name
(2) Production code
(3) Quantity
(4) Lot
(Date code)
(5) Company code
4. RATINGS
4.1 MAXIMUM RATINGS
(at Ta=25
unless otherwise specified.)
Item
Symbol
Conditions
Ratings
Units
Repetitive peak reverse voltage
VRRM
80
V
Isolating voltage
Viso
Terminals-to-case,AC.1min
1500
V
Average output
current
Io
50Hz square wave duty =1/2
Tc =72
30*
A
Non-repetitive forward surge current **
IFSM
Sine wave, 10ms 1shot
160
A
Operating junction temperature
Tj
-40
150
Storage temperature
Tstg
-40
150
*Out put current of centertap full wave connection.
**Rating per element
4.2 ELECTRICAL CHARACTERISTICS
(at Ta=25
unless otherwise specified.)
Item
Symbol
Conditions
Maximum
Units
Forward voltage ***
VF
IF = 15 A
0.76
V
Reverse current ***
IR
VR =VRRM
200
A
Thermal resistance
Rth(j-c)
Junction to case
2.0
/W
***Rating per element
4.3 MECHANICAL CHARACTERISTICS
Mounting torque
Recommended torque
0.3
0.5
N m
Approximate mass
2.0
g