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参数资料
| 型号： | YG875C12R |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | 整流器 |
| 英文描述： | 120 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | TO-220F, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 586K |
| 代理商： | YG875C12R |
1
YG875C12R (120V, 20A)
Maximum Ratings and Characteristics
Maximum ratings (at Ta=25C Unless otherwise specified)
Item
Symbols
Conditions
Ratings
Units
Repetitive peak reverse voltage
VRRM
120
V
Isolating voltage
Viso
Terminals-to-case, AC.1min
1500
V
Average output current
IO
50Hz Square wave duty =1/2
Tc =131C
20 *
A
Non-repetitive surge current **
IFSM
Sine wave, 10ms 1shot
145
A
Operating junction temperature
Tj
175
C
Storage temperature
Tstg
-40 to +175
C
*Out put current of center tap full wave connection.
**Rating per element
Electrical characteristics (at Ta=25C Unless otherwise specified)
Item
Symbols
Conditions
Maximum
Units
Forward voltage***
VF
IF = 10 A
0.88
V
Reverse current***
IR
VR =VRRM
20
A
Thermal resistance
Rth(j-c)
Junction to case
2.5
C/W
***Rating per element
http://www.fujisemi.com
FUJI Diode
Mechanical characteristics
Item
Conditions
Ratings
Units
Mounting torque
Recommended torque
0.3 to 0.5
Nm
Approximate mass
2.0
g
Ultra Low IR Schottky Barrier Diode
Features
Ultra Low IR
Low VF
Tj MAX = 175C
High reliability at higher temperatures
Applications
High frequency operation
DC-DC converters
AC adapter
Outline Drawings [mm]
Connection diagram
TO-220F
YG875C12
Note:1 Country of origin mark.
"P" is Made in PHILIPPINES.
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