参数资料
型号: YG882C02R
厂商: FUJI ELECTRIC CO LTD
元件分类: 整流器
英文描述: 16 A, 20 V, SILICON, RECTIFIER DIODE, TO-220AB
封装: SC-67, TO-220F15, 3 PIN
文件页数: 2/3页
文件大小: 56K
代理商: YG882C02R
YG882C02R
(20V / 16A TO-22OF15)
Characteristics
0.1
1
10
100
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Tj=125
o
C
Tj=100
o
C
Tj=25
o
C
Forward Characteristic (typ.)
IF
Forward
Current
(A)
VF
Forward Voltage
(V)
0
5
10
15
20
25
10
-2
10
-1
10
0
10
1
10
2
10
3
Reverse Characteristic (typ.)
Tj= 25
o
C
Tj=100
o
C
Tj=125
o
C
IR
Reverse
Current
(mA)
VR
Reverse Voltage
(V)
0
123
4567
89
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
Per 1element
DC
Square wave
λ=180
o
Sine wave
λ=180
o
Square wave
λ=120
o
Square wave
λ=60
o
Forward Power Dissipation
WF
Forward
Power
Dissipation
(W)
Io
Average Forward Current
(A)
360°
Io
λ
0
5
10
15
20
25
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
Reverse Power Dissipation
α =180
o
DC
PR
Reverse
Power
Dissipation
(W)
VR
Reverse Voltage
(V)
360°
VR
α
0246
8
10
12
14
16
18
20
22
24
60
65
70
75
80
85
90
95
100
105
110
115
120
125
130
135
140
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Square wave
λ=120
o
Square wave
λ=60
o
Square wave
λ=180
o
Sine wave
λ=180
o
DC
Current Derating (Io-Tc)
Tc
Case
Temperature
(
o
C)
Io
Average Output Current
(A)
1
10
100
1000
10000
Junction Capacitance Characteristic (typ.)
Cj
Junction
Capacitance
(pF)
VR
Reverse Voltage
(V)
VR=10V
360°
λ
Io
相关PDF资料
PDF描述
YG885C02R SCHOTTKY BARRIER DIODE
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YG901C3R LOW LOSS SUPER HIGH SPEED DIODE
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YG902C3R LOW LOSS SUPER HIGH SPEED DIODE
相关代理商/技术参数
参数描述
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YG885C02R 制造商:未知厂家 制造商全称:未知厂家 功能描述:SCHOTTKY BARRIER DIODE
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