参数资料
型号: YG985C6R-P
厂商: FUJI ELECTRIC CO LTD
元件分类: 整流器
英文描述: 20 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB
封装: PLASTIC, TO-220F, 3 PIN
文件页数: 6/12页
文件大小: 187K
代理商: YG985C6R-P
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MS5D3309 3/12
H04-004-03a
Fuji Electric Device Technology Co.,Ltd.
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1.SCOPE
This specification provides the ratings and the test requirement for FUJI SILICON DIODE
YG985C6R
2.TYPE NAME,ORDERING TYPE NAME,COUNTRY CODE,PACKAGING ASSEMBLY LOCATION
Type name
Ordering type name
Country code
Packaging assembly location
YG985C6R
Blank
Japan
YG985C6R
YG985C6R-P
P
Philippines
3.ORDERING TYPE NAME,PACKAGE TYPE,OUT VIEW MARKING,MOLDING RESIN, CHARACTERISTICS
Ordering type name
Package type
Out view Marking
Molding resin
Characteristics
YG985C6R
Page
9/12
YG985C6R-P
TO-220F
Page
9/12
UL:V-0
Page
10/12
12/12
Bar code label is EIAJ C-3 specification.
Indispensable description items are shown as below.
(1) Type name
(2) Production code
(3) Quantity
(4) Lot
(Date code)
(5) Company code
4.RATINGS
4.1 MAXIMUM RATINGS
(at Ta=25
unless otherwise specified.)
Item
Symbol
Conditions
Ratings
Units
Repetitive peak reverse voltage
VRRM
600
V
Isolating voltage
Viso
Terminals-to-Case,AC.1min
1500
V
Average output
current
Io
50Hz square wave duty =1/2
Tc =60
20*
A
Non-repetitive forward surge current **
IFSM
Sine wave, 10ms 1shot
50
A
Operating junction temperature
Tj
150
Storage temperature
Tstg
-40
150
*Out put current of centertap full wave connection.
**Rating per element
4.2 ELECTRICAL CHARACTERISTICS
(at Ta=25
unless otherwise specified.)
Item
Symbol
Conditions
Maximum
Units
Forward voltage ***
VF
IF = 10 A
3.0
V
Reverse current ***
IR
VR =VRRM
30
A
Reverse recovery time
trr
IF=0.1A,IR=0.2A,Irec=0.05A
0.028
s
Thermal resistance
Rth(j-c)
Junction to case
1.75
/W
***Rating per element
4.3 MECHANICAL CHARACTERISTICS
Mounting torque
Recommended torque
0.3
0.5
N m
Approximate mass
2.0
g
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