参数资料
| 型号： | ZEN056V075A48LS |
| 厂商： | TE Connectivity |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | POLYZEN 5.6V PPTC/ZENER SMD |
| 产品培训模块： | The PolyZen Circuit Protection Solution Circuit Protection Products |
| 产品目录绘图： | ZEN Series Circuit ZEN Series Footprint PolyZen Series |
| 标准包装： | 1 |
| 系列： | PolyZen |
| 电压 - 工作： | 5.6V |
| 电压 - 箝位： | 24V |
| 技术： | 混合技术 |
| 功率（瓦特）： | 700mW |
| 电路数： | 1 |
| 应用： | 通用 |
| 封装/外壳： | 3-SMD，无引线 |
| 供应商设备封装： | SMD |
| 包装： | 标准包装 |
| 产品目录页面： | 2404 (CN2011-ZH PDF) |
| 其它名称： | ZEN056V075A48LSDKR |
PolyZen Devices
Polymer Protected Zener Diode
PolyZen devices are polymer enhanced precision Zener
diode micro-assemblies that help protect sensitive
electronics from damage caused by inductive voltage
spikes, voltage transients, use of incorrect power supplies
and reverse bias.
The PolyZen micro-assembly incorporates a stable
Zener diode for precise voltage clamping and a
resistively non-linear, polymeric positive temperature
coefficient (PPTC) layer that responds to either diode
heating or overcurrent events by transitioning from a
low to high resistance state.
PolyZen devices help provide resettable protection
against damage caused by multi-watt fault events and
require only 0.7W power dissipation. In the event of
sustained high power conditions, the PPTC element of
the device “trips” to limit current and generate voltage
drop. This functionality helps protect both the Zener
and the follow-on electronics, effectively increasing the
diode’s power handling capacity.
Benefits
? Helps shield downstream electronics from overvoltage
and reverse bias
? Trip events shut out overvoltage and reverse bias
sources
? Analog nature of trip events minimize upstream
inductive spikes
? Helps reduce design costs with single component
placement and minimal heat sinking requirements
Applications
? Portable media players
? Global positioning systems
? Hard disk drives 5V & 12V bus
? Solid State Drives (SSD) 5V bus
Features
? RoHS compliant
? Overvoltage transient suppression
? Hold currents up to 2.3A
? Time delayed, overvoltage trip
? Time delayed, reverse bias trip
? Power handling on the order of 30 watts
? Integrated device construction
? Cellphone charger port and USB power
? Automotive peripheral input power
? DC power port protection
? Industrial handheld POS
5
OBSOLETE
NOT the LATEST
REVISION
31
相关PDF资料 |
PDF描述 |
|---|---|
| 91596-120LF | CONN RECEPT 20POS 2MM STR DL SMD |
| SEP0900Q38CB | SIDACTOR ETHERNET POE 90V 100A |
| SFH31-NPPB-D25-SP-BK | CONN HDR FMAL 50PS 1.27MM SMD AU |
| 963120-2000-AR-PR | CONN SOCKET SGL 20POS GOLD SMD |
| TS-701-HT-40P | CIRCUIT BRKR THERMAL 40A 1POLE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ZEN056V115A24LS | 功能描述:TVS 二极管 - 瞬态电压抑制器 24V 0.7W 1.15A RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| ZEN056V130A18GS | 功能描述:稳压二极管 18V ACCUR 30W 1.3A RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| ZEN056V130A24CE | 功能描述:TVS 二极管 - 瞬态电压抑制器 5.6V .07W 1.3A CE SMD PolyZen DEVICES RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| ZEN056V130A24GS | 功能描述:稳压二极管 24V ACCUR 30W 1.3A RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| ZEN056V130A24LS | 功能描述:TVS 二极管 - 瞬态电压抑制器 5.6V .12W 1.3A LS SMD PolyZen DEVICES RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
发布紧急采购，3分钟左右您将得到回复。