- 您现在的位置：买卖IC网 > PDF目录16252 > ZEN056V230A16LS-TB (TE Connectivity)POLYZEN 5.6V PPTC/ZENR TEST BRD PDF资料下载
参数资料
| 型号： | ZEN056V230A16LS-TB |
| 厂商： | TE Connectivity |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | POLYZEN 5.6V PPTC/ZENR TEST BRD |
| 产品培训模块： | The PolyZen Circuit Protection Solution Circuit Protection Products |
| 产品目录绘图： | PolyZen Test Board |
| 标准包装： | 75 |
| 系列： | PolyZen |
| 主要目的： | 电路保护，瞬态电压抑制（TVS） |
| 嵌入式： | 否 |
| 已用 IC / 零件： | ZEN056V230A16LS |
| 主要属性： | 5.6V 齐纳，2.3A PTC 保持电流 |
| 已供物品： | 板 |
| 相关产品： | ZEN056V230A16LSDKR-ND - POLYZEN 5.6V PPTC/ZENER SMD ZEN056V230A16LSCT-ND - POLYZEN 5.6V PPTC/ZENER SMD ZEN056V230A16LSTR-ND - POLYZEN 5.6V PPTC/ZENER SMD |
PolyZen Devices
Polymer Protected Zener Diode
PolyZen devices are polymer enhanced precision Zener
diode micro-assemblies that help protect sensitive
electronics from damage caused by inductive voltage
spikes, voltage transients, use of incorrect power supplies
and reverse bias.
The PolyZen micro-assembly incorporates a stable
Zener diode for precise voltage clamping and a
resistively non-linear, polymeric positive temperature
coefficient (PPTC) layer that responds to either diode
heating or overcurrent events by transitioning from a
low to high resistance state.
PolyZen devices help provide resettable protection
against damage caused by multi-watt fault events and
require only 0.7W power dissipation. In the event of
sustained high power conditions, the PPTC element of
the device “trips” to limit current and generate voltage
drop. This functionality helps protect both the Zener
and the follow-on electronics, effectively increasing the
diode’s power handling capacity.
Benefits
? Helps shield downstream electronics from overvoltage
and reverse bias
? Trip events shut out overvoltage and reverse bias
sources
? Analog nature of trip events minimize upstream
inductive spikes
? Helps reduce design costs with single component
placement and minimal heat sinking requirements
Applications
? Portable media players
? Global positioning systems
? Hard disk drives 5V & 12V bus
? Solid State Drives (SSD) 5V bus
Features
? RoHS compliant
? Overvoltage transient suppression
? Hold currents up to 2.3A
? Time delayed, overvoltage trip
? Time delayed, reverse bias trip
? Power handling on the order of 30 watts
? Integrated device construction
? Cellphone charger port and USB power
? Automotive peripheral input power
? DC power port protection
? Industrial handheld POS
5
OBSOLETE
NOT the LATEST
REVISION
31
相关PDF资料 |
PDF描述 |
|---|---|
| RBB06DHHR | CONN EDGECARD 12POS DIP .050 SLD |
| HCC13DRYN | CONN EDGECARD 26POS DIP .100 SLD |
| HCC13DRYH | CONN EDGECARD 26POS DIP .100 SLD |
| ZEN164V130A24LS-TB | POLYZEN 16.4V PPTC/ZENR TEST BRD |
| GEC08DTEI | CONN EDGECARD 16POS .100 EYELET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ZEN056V260A16CE | 功能描述:TVS 二极管 - 瞬态电压抑制器 5.6V .032W 2.6A CE SMD PolyZen DEVICES RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| ZEN059V130A24LS | 功能描述:TVS 二极管 - 瞬态电压抑制器 5.9V 1.0W .12A LS SMD PolyZen DEVICES RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| ZEN065V130A24LS | 功能描述:TVS 二极管 - 瞬态电压抑制器 6.5V .12W 1.3A LS SMD PolyZen DEVICES RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| ZEN065V230A16LS | 功能描述:TVS 二极管 - 瞬态电压抑制器 6.5V .04W 2.3A LS SMD PolyZen DEVICES RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| ZEN065V230A16LS-TB | 功能描述:POLYZEN 6.5V PPTC/ZENR TEST BRD RoHS:是 类别:编程器，开发系统 >> 评估演示板和套件 系列:PolyZen 产品培训模块:Obsolescence Mitigation Program 标准包装:1 系列:- 主要目的:电源管理，电池充电器 嵌入式:否 已用 IC / 零件:MAX8903A 主要属性:1 芯锂离子电池 次要属性:状态 LED 已供物品:板 |
发布紧急采购，3分钟左右您将得到回复。