参数资料
型号: ZHCS1000
厂商: ZETEX PLC
元件分类: 参考电压二极管
英文描述: SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ”SuperBAT”
中文描述: 1 A, SILICON, SIGNAL DIODE
封装: SOT-23, 3 PIN
文件页数: 1/3页
文件大小: 163K
代理商: ZHCS1000
SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE ”SuperBAT”
ISSUE 2 - OCTOBER 1997
%
FEATURES:
High current capability
Low V
F
APPLICATIONS:
Mobile telecomms, PCMIA & SCSI
DC-DC Conversion
PARTMARKING DETAILS : ZS1
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Continuous Reverse Voltage
V
R
I
F
V
F
I
FAV
I
FSM
40
V
Forward Current
1000
mA
Forward Voltage @ I
F
= 1000mA(typ)
Average Peak Forward Current;D.C.= 50%
425
mV
1750
mA
Non Repetitive Forward Current t
100
μ
s
t
10ms
12
5.2
A
A
Power Dissipation at T
amb
= 25° C
Storage Temperature Range
P
tot
T
stg
T
j
500
mW
-55 to + 150
° C
Junction Temperature
125
° C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25° C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Reverse Breakdown
Voltage
V
(BR)R
40
60
V
I
R
= 300
μ
A
Forward Voltage
V
F
240
265
305
355
390
425
495
420
270
290
340
400
450
500
600
mV
mV
mV
mV
mV
mV
mV
mV
I
F
= 50mA*
I
F
= 100mA*
I
F
= 250mA*
I
F
= 500mA*
I
F
= 750mA*
I
F
= 1000mA*
I
F
= 1500mA*
I
F
= 1000mA,T
a
= 100° C
*
Reverse Current
I
R
50
100
μ
A
V
R
= 30V
Diode Capacitance
C
D
25
pF
f= 1MHz,V
R
= 25V
Reverse Recovery
Time
t
rr
12
ns
switched from
I
= 500mA to I
R
=
500mA
Measured at I
R
= 50mA
*Measured under pulsed conditions. Pulse width= 300
μ
s. Duty cycle
2%
ZHCS1000
1
3
C
1
A
3
2
SOT23
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