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参数资料
| 型号： | ZHCS756 |
| 厂商： | ZETEX PLC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT” |
| 中文描述： | 1.5 A, SILICON, RECTIFIER DIODE |
| 封装： | SOT-23, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 161K |
| 代理商： | ZHCS756 |
SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE “SuperBAT”
ISSUE 1- NOVEMBER 1997
%
FEATURES:
Low V
F
High Current Capability
APPLICATIONS:
DC - DC converters
Mobile telecomms
PCMCIA
PARTMARK DETAIL: S76
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Continuous Reverse Voltage
V
R
I
F
V
F
I
FAV
I
FSM
60
V
Forward Current (Continuous)
750
mA
Forward Voltage @ I
F
= 750mA
Average Peak Forward Current; D.C. = 50%
610
mV
1500
mA
Non Repetitive Forward Current t
≤
100
μ
s
t
≤
10ms
12
5
A
A
Power Dissipation at T
amb
= 25° C
Storage Temperature Range
P
tot
T
stg
T
j
500
mW
-55 to + 150
° C
Junction Temperature
125
° C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25° C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Reverse Breakdown
Voltage
V
(BR)R
60
80
V
I
R
= 300
μ
A
Forward Voltage
V
F
250
285
350
440
520
600
760
290
330
410
500
610
700
900
mV
mV
mV
mV
mV
mV
mV
I
F
= 50mA*
I
F
= 100mA*
I
F
= 250mA*
I
F
= 500mA*
I
F
= 750mA*
I
F
= 1000mA*
I
F
= 1500mA*
Reverse Current
I
R
50
100
μ
A
V
R
= 45V
Diode Capacitance
C
D
17
pF
f= 1MHz,V
R
= 25V
Reverse Recovery
Time
t
rr
12
ns
switched from
I
= 500mA to I
= 500mA
Measured at I
R
= 50mA
*Measured under pulsed conditions. Pulse width= 300
μ
s; duty cycle
≤
2%.
ZHCS756
1
3
C
1
A
3
2
SOT23
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| ZHCS756 | 制造商:Diodes Incorporated 功能描述:DIODE SCHOTTKY SOT-23 |
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