参数资料
型号: ZL1505ALNNT1
厂商: Intersil
文件页数: 5/13页
文件大小: 0K
描述: IC MOSFET DRIVER SGL 10DFN
标准包装: 1,000
配置: 高端和低端,同步
输入类型: PWM
延迟时间: 31.5ns
电流 - 峰: 3.2A
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 30V
电源电压: 3 V ~ 30 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 10-VFDFN 裸露焊盘
供应商设备封装: 10-DFN(3x3)
包装: 带卷 (TR)
ZL1505
Electrical Specifications V DD = 6.5V, T J = -40°C to +125°C unless otherwise noted. Typical values are at T A = +25°C. Boldface limits
apply over the operating temperature range, -40°C to +125°C. (Continued)
MIN
MAX
PARAMETER
CONDITIONS
(Note 10)
TYP
(Note 10)
UNIT
THERMAL PROTECTION
Thermal Trip Point
Thermal Reset Point
150
134
° C
° C
UPPER GATE DRIVER CHARACTERISTICS
Driver Voltage (V BST – V SW )
6
V
High-side Driver Peak Gate Drive Current (Pull-up) (V GH – V SW ) = 2.5V
HSEL connected to
BST
HSEL connected to
2.0
1.0
3.2
1.7
-
A
A
SW
High-side Driver Peak Gate Drive Current
(Pull-down)
(V GH – V SW ) = 2.5V
HSEL connected to
BST
HSEL connected to
2.0
1.0
3.2
1.6
-
A
A
SW
High-side Driver Pull-up Resistance
(V BST – V GH ) = 50mV
HSEL connected to
BST
HSEL connected to
-
0.7
0.9
0.9
1.2
Ω
Ω
SW
High-side Driver Pull-down Resistance
(V GH – V SW ) = 50mV
HSEL connected to
BST
HSEL connected to
0.8
1.1
1.1
1.5
Ω
Ω
SW
LOWER GATE DRIVER CHARACTERISTICS
Driver voltage (V DD )
-
6.5
-
V
Low-side Driver Peak Gate Drive Current (Pull-
up)
(V GL - V GNG ) = 2.5V
LSEL connected to
VDD
LSEL connected to
3.0
1.5
4.5
2.4
-
A
A
GND
Low-side Driver Peak Gate Drive Current (Pull-
down)
(V GL – V GND ) = 2.5V
LSEL connected to
VDD
LSEL connected to
3.5
1.8
5.4
2.8
-
A
A
GND
Low-side Driver Pull-up Resistance
(V DD - V GL ) = 50mV
LSEL connected to
VDD
LSEL connected to
-
0.7
1.0
0.9
1.3
Ω
Ω
GND
Low-side Driver Pull-down Resistance
(V GL – GND) = 50mV
LSEL connected to
VDD
LSEL connected to
-
0.5
0.7
0.7
1.0
Ω
Ω
GND
SWITCHING CHARACTERISTICS
GH rise time, t RH
C GH = 3nF
HSEL connected to
BST
HSEL connected to
-
5.3
10.5
8.5
16.5
ns
ns
SW
5
FN6845.3
February 25, 2011
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