参数资料
型号: ZNBG3000Q16TC
厂商: Diodes Inc
文件页数: 5/9页
文件大小: 0K
描述: IC GENERATOR 3BIAS 2.2V 16-QSOP
标准包装: 2,500
功能: 偏压控制器
RF 型: LNBs,PMR
封装/外壳: 16-SSOP(0.154",3.90mm 宽)
包装: 带卷 (TR)
ZNBG3000
FUNCTIONAL DIAGRAM
ZNBG3001
FUNCTIONAL DESCRIPTION
The ZNBG devices provide all the bias requirements for external FETs, including the generation
of the negative supply required for gate biasing, from the single supply voltage.
The diagram above shows a single stage from the ZNBG series. The ZNBG3000/1 contains 3 such
stages.
The drain voltage of the external FET Q N is set by the ZNBG device to its normal operating voltage.
This is determined by the on board V D Set reference, for the ZNBG3000 this is nominally 2.2 volts
whilst the ZNBG3001 provides nominally 2 volts.
The drain current taken by the FET is monitored by the low value resistor I D Sense. The amplifier
driving the gate of the FET adjusts the gate voltage of Q N so that the drain current taken matches
the current called for by an external resistor R CAL . Both ZNBG devices have the facility to program
different drain currents into selected FETs.
Since the FET is a depletion mode transistor, it is usually necessary to drive its gate negative with
respect to ground to obtain the required drain current. To provide this capability powered from
a single positive supply, the device includes a low current negative supply generator. This
generator uses an internal oscillator and two external capacitors, C NB and C SUB .
4-141
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