参数资料
型号: ZVN4424A
厂商: Diodes Inc
文件页数: 3/4页
文件大小: 0K
描述: MOSFET N-CH 240V 260MA TO92-3
其它图纸: TO-92
TO-92 Pin Out
TO-92 Front
TO-92 Side
标准包装: 4,000
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 240V
电流 - 连续漏极(Id) @ 25° C: 260mA
开态Rds(最大)@ Id, Vgs @ 25° C: 5.5 欧姆 @ 500mA,10V
Id 时的 Vgs(th)(最大): 1.8V @ 1mA
输入电容 (Ciss) @ Vds: 200pF @ 25V
功率 - 最大: 750mW
安装类型: 通孔
封装/外壳: TO-226-3、TO-92-3 标准主体
供应商设备封装: TO-92-3
包装: 散装
产品目录页面: 1475 (CN2011-ZH PDF)
ZVN4424A/C
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP
MAX. UNIT
CONDITIONS.
Drain-Source
BV DSS
240
V
I D =1mA, V GS =0V
Breakdown Voltage
Gate-Source Threshold
V GS(th)
0.8
1.3
1.8
V
I D =1mA, V DS = V GS
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
I GSS
I DSS
100
10
100
nA
μ A
μ A
V GS = ± 40V, V DS =0V
V DS =240 V, V GS =0
V DS =190 V,
V GS =0V, T=125°C
On-State Drain Current
I D(on)
0.8
1.4
A
V DS =10 V, V GS =10V
Static Drain-Source
On-State Resistance
R DS(on)
4
4.3
5.5
6
?
?
V GS =10V,I D =500mA
V GS =2.5V,I D =100mA
Forward
g fs
0.4
0.75
S
V DS =10V,I D =0.5A
Transconductance (1) (2)
Input Capacitance (2)
C iss
110
200
pF
Common Source Output
Capacitance (2)
Reverse Transfer
C oss
C rss
15
3.5
25
15
pF
pF
V DS =25V, V GS =0V, f=1MHz
Capacitance (2)
Turn-On Delay Time
t d(on)
2.5
5
ns
(2)(3)
Rise Time (2)(3)
Turn-Off Delay Time
t r
t d(off)
5
40
8
60
ns
ns
V DD ≈ 50V, I D =0.25A,
V GEN =10V
(2)(3)
Fall Time (2)(3)
t f
16
25
ns
(1)*Measured under pulsed conditions. Pulse width=300 μ s. Duty cycle ≤ 2%
(2)Sample Test
(3) Switching times measured with 50 ? source impedance and >5ns rise time on pulse generator
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