参数资料
型号: ZVN4525GTA
厂商: Diodes Inc
文件页数: 2/8页
文件大小: 0K
描述: MOSFET N-CH 250V 310MA SOT223
其它图纸: SOT-223
SOT-223 Footprint
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 250V
电流 - 连续漏极(Id) @ 25° C: 310mA
开态Rds(最大)@ Id, Vgs @ 25° C: 8.5 欧姆 @ 500mA,10V
Id 时的 Vgs(th)(最大): 1.8V @ 1mA
闸电荷(Qg) @ Vgs: 3.65nC @ 10V
输入电容 (Ciss) @ Vds: 72pF @ 25V
功率 - 最大: 2W
安装类型: 表面贴装
封装/外壳: TO-261-4,TO-261AA
供应商设备封装: SOT-223
包装: 标准包装
产品目录页面: 1475 (CN2011-ZH PDF)
其它名称: ZVN4525GDKR
ZVN4525G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current (V GS =10V; TA=25°C)(a)
(V GS =10V; TA=70°C)(a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T A =25°C (a)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V DSS
V GS
I D
I D
I DM
I S
I SM
P D
T j : T stg
LIMIT
250
± 40
310
248
1.44
1.1
1.44
2
16
-55 to +150
UNIT
V
V
mA
mA
A
A
A
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R θ JA
R θ JA
VALUE
63
26
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
NB High Voltage Applications
For high voltage applications, the appropriate industry sector guidelines should be considered with regard to
voltage spacing between conductors.
ISSUE 1 - MARCH 2001
2
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