参数资料
型号: ZXCT1084E5TA
厂商: Diodes Inc
文件页数: 3/13页
文件大小: 300K
描述: IC CURRENT MONITOR 3% SOT23-5
标准包装: 1
功能: 电流监控器
检测方法: 高端
输入电压: 2.7 V ~ 60 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: SC-74A,SOT-753
供应商设备封装: SOT-25
包装: 标准包装
其它名称: ZXCT1084E5TADKR
 
ZXCT1082/83/84/85/86/87
ZXCT1082/83/84/85/86/87  
Document number: DS32162 Rev. 2 - 2 
3 of 13
www.diodes.com
June 2011
?Diodes Incorporated 
 Product Line of
Diodes Incorporated
Electrical Characteristics  
Test Conditions T
A
 = 25癈, V
S+
 = 12V, V
CC
 = 5 V, V
SENSE
1
 = 100mV, ZXCT1082/3 R
GT
 = 5k&, R
G
 = 125k&; unless otherwise stated.
(FT = -40癈 to +125癈)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
Input
I
S+
 
S+ input current
V
SENSE
 = 0mV (Note 1)
 
 
1.7
 
T
A
 = FT
 
 
5
I
S-
 
S- input current
 
 
1.7
 
T
A
 = FT
 
 
5
V
IO
 
Input Offset Voltage
 
(Note 2)
V
SENSE
 = 0mV
 
 
?.2
?
mV
ZXCT1082/3/4/5
T
A
 = FT
 
 
?.5
ZXCT1086/87
T
A
 = FT
 
 
?
Temperature co-efficient
 
?
 
礦/K
Output
G
T
 
Transconductance
ZXCT1082/3
V
SENSE
= 10mV to 150mV
(Note 1, 3)
 
 
200
 
礎/V
G
T-ERR
 
Transconductance error
(Note 4)
 
-1
 
+1
%
T
A
 = FT
-2
 
+2
G
T-TC
 
Transconductance
temperature co-efficient
T
A
 = FT
 
10
 
nA/K
Z
OUT
 
Output impedance
ZXCT1082/3
 
1Ζ5
 
G&ΖpF
G
V
 
Gain
ZXCT1084/5/6/7
V
SENSE
 = 10mV to 150mV
(Note 1)
1084/5
 
25
 
V/V
1086/7
 
50
 
G
V-ERR
    Gain error (Note 4)
 
-1
 
+1
%
T
A
 = FT
-2
 
+2
G
V-TC
 
Voltage gain temperature
co-efficient
T
A
 = FT
 
100
 
ppm/K
Z
OUT
 
Output impedance
ZXCT1084/5/6/7
 
125
 
k&
V
OUTH
 
Output relative to common
mode, V
S-
 
ZXCT1082/3
V
LOAD
- 1
V
LOAD
- 0.8
 
V
ZXCT1084/5/6/7
V
S-
- 1     V
S-
- 0.8
 
Notes:    1. For the ZXCT1082/83 V
SENSE
 = V
SUPPLY
  V
LOAD
 where V
LOAD
 is the load voltage or the lower potential side of the sense resistor.
  For the ZXCT1083/84/85/86 V
SENSE
 = V
S+
  V
S-

2. V
IO
 is extrapolated from measurements for the gain-error test.
3. For V
SENSE
 > 10mV, the internal voltage-current converter is fully linear. This enables a true offset to be defined and used.
4. Gain or transconductance error is calculated by applying two values of V
SENSE
 and calculating the error of the slope vs. the ideal.
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
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