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参数资料
| 型号： | ZXGD3103N8TC |
| 厂商： | Diodes Inc |
| 文件页数： | 10/12页 |
| 文件大小： | 0K |
| 描述： | IC SYNCH MOSFET CNTRLR 4A SO8 |
| 标准包装： | 1 |
| 配置： | 高端或低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 150ns |
| 电流 - 峰： | 2.5A |
| 配置数： | 2 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 180V |
| 电源电压： | 5 V ~ 15 V |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 其它名称： | ZXGD3103N8TCDKR |
A Product Line of
Diodes Incorporated
ZXGD3103N8
Design considerations
It is advisable to decouple the ZXGD3103 closely to V CC and ground due to the possibility of high peak gate
currents with a 1 μ F X7R type ceramic capacitor as shown in Figure 2. The Gate pins should be as close to
the MOSFET’s gate as possible. Also the ground return loop should be as short as possible.
To minimize parasitic inductance-induced premature turn-off issue of the synchronous controller always
keep the PCB track length between ZXGD3101’s Drain input and MOSFET’s Drain to less than 10mm. Low
internal inductance MOSFET packages such as SO-8 and PolarPak are also recommended for high
switching frequency power conversion to minimize body diode conduction.
R1, Q1 D1 and C1 in Figure 1 are only required as a series drop-down regulator to maintain a stable Vcc
around 10V from a power supply output voltage greater than 15V.
External gate resistors are optional. They can be inserted to control the rise and fall time which may help
with EMI issues.
The proper selection of external resistors R REF and R BIAS is important to the optimum device operation.
Select a value for resistor R REF and R BIAS from Table 1 based on the desired Vcc value. This provides the
typical ZXGD3103’s detection threshold voltage of 10mV.
Table 1. Recommended resistor values for various supply voltages
ZXGD3103N8
Document number: DS32255 Rev. 2 - 2
V CC
5V
10V
12V
15V
R BIAS
1K6
3K3
3K9
5K1
10 of 12
www.diodes.com
R REF
2K0
4K3
5K1
6K8
November 2011
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXGD3104N8 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SYNCHRONOUS MOSFET CONTROLLER IN SO8 |
| ZXGD3104N8TC | 功能描述:MOSFET Synch MOSFET Control SO-8 T&R 2.5K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXGD3105N8 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:Low standby power with quiescent supply current < 1mA |
| ZXGD3105N8TC | 功能描述:MOSFET Synch MOSFET Control SO-8 T&R 2.5K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXGIF11 | 制造商:OMRON AUTOMATION AND SAFETY 功能描述:INTER UNIT NPN (RS232 TO BIN) 制造商:OMRON Industrial Automation 功能描述:INTER UNIT NPN (RS232 TO BIN) |
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