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| 型号： | ZXGD3104N8TC |
| 厂商： | Diodes Inc |
| 文件页数： | 3/13页 |
| 文件大小： | 0K |
| 描述： | IC SYNCH MOSFET CNTLR SO8 |
| 标准包装： | 1 |
| 配置： | 高端和低端，同步 |
| 输入类型： | 电压 |
| 延迟时间： | 250ns |
| 电流 - 峰： | 2.5A |
| 配置数： | 1 |
| 输出数： | 2 |
| 电源电压： | 5 V ~ 25 V |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 其它名称： | ZXGD3104N8TCDKR |
A Product Line of
Diodes Incorporated
ZXGD3104N8
Maximum Ratings @T A = 25°C unless otherwise specified
Characteristic
Supply voltage, relative to GND
Drain pin voltage
Gate output voltage
Gate Driver peak source current
Gate Driver peak sink current
Reference voltage
Reference current
Bias voltage
Bias current
Symbol
V CC
V D
V G
I SOURCE
I SINK
V REF
I REF
V BIAS
I BIAS
Value
25
-3 to 180
-3 to V CC + 3
2.5
7
V CC
25
V CC
100
Unit
V
V
V
A
A
V
mA
V
mA
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
(Note 4)
Symbol
Value
490
3.92
Unit
Power Dissipation
Linear derating factor
(Note 5)
(Note 6)
P D
655
5.24
720
5.76
mW
mW/ ° C
(Note 7)
(Note 4)
785
6.28
255
Thermal Resistance, Junction to Ambient
(Note 5)
(Note 6)
R θ JA
191
173
° C/W
(Note 7)
159
Thermal Resistance, Junction to Lead
Operating Temperature Range
Storage Temperature Range
(Note 8)
R θ JL
T J
T STG
135
-40 to +150
-50 to +150
° C/W
° C
Notes:
4. For a device surface mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the
device is measured when operating in a steady-state condition.
5. Same as note (4), except pin 5 (V CC ) and pin 6 (GND) are both connected to separate 5mm x 5mm 1oz copper heatsinks.
6. Same as note (5), except both heatsinks are 10mm x 10mm.
7. Same as note (5), except both heatsinks are 15mm x 15mm.
8. Thermal resistance from junction to solder-point at the end of each lead on pin 5 (V CC ) and pin 6 (GND).
ZXGD3104N8
Document Number DS35546 Rev. 1 – 2
3 of 13
www.diodes.com
November 2011
? Diodes Incorporated
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