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参数资料
| 型号： | ZXM61N03FTC |
| 厂商： | Diodes Inc |
| 文件页数： | 4/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHAN 30V SOT23-3 |
| 标准包装： | 10,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 220 毫欧 @ 910mA，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4.1nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 150pF @ 25V |
| 功率 - 最大： | 625mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 带卷 (TR) |
ZXM61N03F
ELECTRICAL CHARACTERISTICS (at T A = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.(3) MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V (BR)DSS
30
V
I D =250 μ A, V GS =0V
Zero Gate Voltage Drain Current
I DSS
1
μ A
V DS =30V, V GS =0V
Gate-Body Leakage
I GSS
100
nA
V GS = ± 20V, V DS =0V
Gate-Source Threshold Voltage
V GS(th)
1.0
V
I D =250 μ A, V DS = V GS
Static Drain-Source On-State Resistance
(1)
R DS(on)
0.22
0.30
?
?
V GS =10V, I D =0.91A
V GS =4.5V, I D =0.46A
Forward Transconductance (3)
g fs
0.87
S
V DS =10V,I D =0.46A
DYNAMIC (3)
Input Capacitance
C iss
150
pF
Output Capacitance
C oss
35
pF
V DS =25 V, V GS =0V,
f=1MHz
Reverse Transfer Capacitance
C rss
15
pF
SWITCHING (2) (3)
Turn-On Delay Time
t d(on)
1.9
ns
Rise Time
Turn-Off Delay Time
t r
t d(off)
2.5
5.8
ns
ns
V DD =15V, I D =0.91A
R G =6.2 ? , R D =16 ?
(refer to test
Fall Time
t f
3.0
ns
circuit)
Total Gate Charge
Q g
4.1
nC
Gate-Source Charge
Q gs
0.4
nC
V DS =24V,V GS =10V,
I D =0.91A
Gate-Drain Charge
Q gd
0.63
nC
(refer to test
circuit)
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V SD
0.95
V
T J =25°C, I S =0.91A,
V GS =0V
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
t rr
Q rr
11.0
3.5
ns
nC
T J =25°C, I F =0.91A,
di/dt= 100A/ μ s
NOTES
(1) Measured under pulsed conditions. Width ≤ 300 μ s. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - JUNE 2004
4
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