参数资料
型号: ZXMC3A17DN8TA
厂商: Diodes Inc
文件页数: 1/10页
文件大小: 0K
描述: MOSFET N/P-CHAN DUAL 30V 8SOIC
产品目录绘图: SO-8
SO-8 Dual Pin Out
标准包装: 1
FET 型: N 和 P 沟道
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 4.1A,3.4A
开态Rds(最大)@ Id, Vgs @ 25° C: 50 毫欧 @ 7.8A,10V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 12.2nC @ 10V
输入电容 (Ciss) @ Vds: 600pF @ 25V
功率 - 最大: 1.25W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 标准包装
产品目录页面: 1473 (CN2011-ZH PDF)
其它名称: ZXMC3A17DN8DKR
ZXMC3A17DN8
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel : V (BR)DSS = 30V : R DS(on) = 0.050 ; I D = 5.4A
P-Channel : V (BR)DSS = -30V : R DS(on) = 0.070 ; I D = -4.4A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
SO8
FEATURES
? Low on-resistance
? Fast switching speed
? Low threshold
? Low gate drive
? Low profile SOIC package
APPLICATIONS
? Motor drive
? LCD backlighting
ORDERING INFORMATION
Q1 = N-channel
Q2 = P-channel
PINOUT
DEVICE
ZXMC3A17DN8TA
ZXMC3A17DN8TC
REEL SIZE
7”
13”
TAPE WIDTH
12mm
12mm
QUANTITY PER REEL
500 units
2500 units
DEVICE MARKING
? ZXMC
3A17
ISSUE 1 - OCTOBER 2005
1
Top View
SEMICONDUCTORS
相关PDF资料
PDF描述
47ASP1R1M2RT SWITCH ROCKER SPDT 0.4VA 20V
403I35E20M00000 CRYSTAL 20.0 MHZ 20PF SMD
403I35E19M66080 CRYSTAL 19.6608 MHZ 20PF SMD
B32671L0123J000 CAP FILM 0.012UF 1KVDC RADIAL
403I35E18M43200 CRYSTAL 18.432 MHZ 20PF SMD
相关代理商/技术参数
参数描述
ZXMC3A17DN8TC 功能描述:MOSFET 30V Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMC3A18DN8 制造商:ZETEX 制造商全称:ZETEX 功能描述:COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
ZXMC3A18DN8_05 制造商:ZETEX 制造商全称:ZETEX 功能描述:COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
ZXMC3A18DN8TA 功能描述:MOSFET 30V COMPLEMENTARY ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMC3A18DN8TC 制造商:ZETEX 制造商全称:ZETEX 功能描述:COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET