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参数资料
| 型号： | ZXMN10A25GTA |
| 厂商： | Diodes Inc |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHAN 100V SOT223 |
| 其它图纸： | SOT-223 SOT-223 Footprint |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 125 毫欧 @ 2.9A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 17nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 859pF @ 50V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 标准包装 |
| 产品目录页面： | 1474 (CN2011-ZH PDF) |
| 其它名称： | ZXMN10A25GDKR ZXMN10A25GDKR-ND ZXMN10A25GTADKR |
Product Summary
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Green
ZXMN10A25G
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
V (BR)DSS
100V
Description
R DS(on) max
125m ? @ V GS = 10V
150m ? @ V GS = 6.0V
I D
T A = +25°C
4.0A
3.7A
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Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
This new generation MOSFET has been designed to minimize the on-
state resistance (R DS(on) ) and yet maintain superior switching
Mechanical Data
performance, making it ideal for high efficiency power management
applications.
Applications
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Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020
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DC Motor Control
DC-AC Inverters
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Terminals Connections: See diagram below
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
SOT223
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Weight: 0.112 grams (approximate)
D
G
S
Top View
Ordering Information (Note 4)
Pin Out - Top View
Equivalent Circuit
Part Number
ZXMN10A25GTA
Qualification
Standard
Case
SOT223
Packaging
1,000 / Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZXMN
10A25
ZXMN10A25 = Product Type Marking Code
ZXMN10A25G
Document number: DS33568 Rev. 3 - 2
1 of 7
www.diodes.com
April 2014
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| ZXMN10A25KTC | MOSFET N-CH 100V DPAK |
| ZXMN10B08E6TC | MOSFET N-CHAN 100V SOT23-6 |
| ZXMN15A27KTC | MOSFET N-CH 150V 1.7A DPAK |
| ZXMN20B28KTC | MOSFET N-CH 200V 1.5A DPAK |
| ZXMN2A01E6TC | MOSFET N-CHAN 20V SOT23-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXMN10A25K | 功能描述:MOSFET N-CHAN 100V DPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| ZXMN10A25KTC | 功能描述:MOSFET N-Chan 100V MOSFET (UMOS) RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXMN10B08E6 | 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23-6 |
| ZXMN10B08E6_05 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:100V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN10B08E6TA | 功能描述:MOSFET 100V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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