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| 型号： | ZXMN6A07FTA |
| 厂商： | Diodes Inc |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 1.2A SOT23-3 |
| 其它图纸： | SOT-23 SOT-23 Top |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 250 毫欧 @ 1.8A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3.2nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 166pF @ 40V |
| 功率 - 最大： | 625mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1473 (CN2011-ZH PDF) |
| 其它名称： | ZXMN6A07FDKR |
A Product Line of
Diodes ? Incorporated
ZXMN6A07F
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
T A = +25°C
(Note 7)
Symbol
V DSS
V GS
Value
60
±20
1.4
Units
V
V
Continuous Drain Current
V GS = 10V
T A = +70°C
T A = +25°C
(Note 7)
(Note 6)
I D
1.1
1.2
A
Pulsed Drain Current (Note 8)
Continuous Source Current (Body Diode) (Note 7)
Pulsed Source Current (Body Diode) (Note 8)
I DM
I S
I SM
6.9
1
6.9
A
A
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 6)
Linear Derating Factor
Power Dissipation (Note 7)
Linear Derating Factor
Symbol
P D
P D
Value
625
5
806
6.4
Unit
mW
mW/°C
mW
mW/°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient (Note 9)
Operating and Storage Temperature Range
(Note 6)
(Note 7)
R θ JA
R θ JL
T J, T STG
200
155
194
-55 to +150
°C/W
°C
Notes:
6. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
7. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs.
8. Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300 μ s - pulse current limited by maximum junction temperate
9. Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMN6A07F
Document Number DS33547 Rev. 7 - 2
2 of 8
www.diodes.com
October 2012
? Diodes Incorporated
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相关代理商/技术参数 |
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| ZXMN6A07FTA-CUT TAPE | 制造商:DIODES 功能描述:ZXMN6A07F Series 60 V 0.25 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3 |
| ZXMN6A07FTC | 功能描述:MOSFET 60V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXMN6A07Z | 制造商:ZETEX 制造商全称:ZETEX 功能描述:60V SOT89 N-channel enhancement mode mosfet |
| ZXMN6A07Z_07 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:60V SOT89 N-channel enhancement mode mosfet |
| ZXMN6A07ZTA | 功能描述:MOSFET 60V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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