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| 型号： | ZXMP4A16GTA |
| 厂商： | Diodes Inc |
| 文件页数： | 4/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 40V 6.4A SOT223 |
| 其它图纸： | SOT-223 SOT-223 Footprint |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 60 毫欧 @ 3.8A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 26.1nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1007pF @ 20V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 标准包装 |
| 产品目录页面： | 1473 (CN2011-ZH PDF) |
| 其它名称： | ZXMP4A16GDKR |
ZXMP4A16G
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
STATIC
I =-250 A, V DS = V GS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (1)(3)
V (BR)DSS
I DSS
I GSS
V GS(th)
R DS(on)
g fs
-40
-1.0
8.85
-1
100
0.060
0.100
V
A
nA
V
S
I D =-250 μ A, V GS =0V
V DS =-40V, V GS =0V
V GS = 20V, V DS =0V
D
V GS =-10V, I D =-3.8A
V GS =-4.5V, I D =-2.9A
V DS =-15V,I D =-3.8A
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
1007
130
85
pF
pF
pF
V DS =-20V, V GS =0V,
f=1MHz
SWITCHING
(2)(3)
Turn-On Delay Time
t d(on)
2.33
ns
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t r
t d(off)
t f
Q g
Q g
Q gs
Q gd
8.84
29.18
12.54
13.6
26.1
2.8
4.8
ns
ns
ns
nC
nC
nC
nC
V DD =-20V, I D =-1A
R G 6.0 , V GS =-10V
V DS =-20V,V GS =-5V,
I D =-3.8A
V DS =-20V,V GS =-10V,
I D =-3.8A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V SD
-0.85
-1.2
V
T J =25 C, I S =-3.4A,
V GS =0V
Reverse Recovery Time (3)
Reverse Recovery Charge
(3)
t rr
Q rr
27.2
25.4
ns
nC
T J =25 C, I F =-3A,
di/dt= 100A/ s
NOTES
(1) Measured under pulsed conditions. Width
300μs. Duty cycle
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 4 - JULY 2003
SEMICONDUCTORS
4
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| ZXMP4A16GTA-CUT TAPE | 制造商:DIODES 功能描述:ZXMP4A16G Series 40 V 0.06 Ohm P-Channel Enhancement Mode MOSFET - SOT-223 |
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| ZXMP4A16K | 制造商:Diodes Incorporated 功能描述:MOSFET P D-PAK 制造商:Diodes Incorporated 功能描述:MOSFET, P, D-PAK 制造商:Diodes Incorporated 功能描述:MOSFET, P CH, 40V, -9.9A, DPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-9.9A; Drain Source Voltage Vds:40V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V; No. of Pins:3;RoHS Compliant: Yes |
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| ZXMP4A16KTC | 功能描述:MOSFET 40V 9.9A P-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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