参数资料
型号: ZXMP4A16KTC
厂商: Diodes Inc
文件页数: 4/8页
文件大小: 0K
描述: MOSFET P-CHAN 40V DPAK
其它图纸: D-PAK
D-PAK Pin Out
标准包装: 1
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 40V
电流 - 连续漏极(Id) @ 25° C: 6.6A
开态Rds(最大)@ Id, Vgs @ 25° C: 60 毫欧 @ 3.8A,10V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 29.6nC @ 10V
输入电容 (Ciss) @ Vds: 965pF @ 20V
功率 - 最大: 2.15W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: TO-252-3
包装: 标准包装
产品目录页面: 1473 (CN2011-ZH PDF)
其它名称: ZXMP4A16KTCDKR
ZXMP4A16K
Electrical characteristics (at T A = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Static
Drain-source breakdown
V (BR)DSS
-40
V
I D =-250 A, V GS =0V
voltage
Zero gate voltage drain current I DSS
Gate-body leakage I GSS
-1
100
A
nA
V DS =-40V, V GS =0V
V GS =±20V, V DS =0V
Gate-source threshold voltage
V GS(th)
-1.0
V
I D =-250 A,
V DS =V GS
Static drain-source on-state
resistance (*)
R DS(on)
0.060
0.100
V GS =-10V, I D =-3.8A
V GS =-4.5V, I D =-2.9A
Forward transconductance (*)(?) g fs
7.4
S
V DS =-15V,I D =-3.8A
Dynamic (?)
Input capacitance
Output capacitance
Reverse transfer capacitance
C iss
C oss
C rss
965
180
158
pF
pF
pF
V DS =-20V, V GS =0V,
f=1MHz
Switching (?) (?)
Turn-on delay time
t d(on)
4.0
ns
Rise time
Turn-off delay time
Fall time
Gate charge
t r
t d(off)
t f
Q g
6.0
36.8
17.1
16.5
ns
ns
ns
nC
V DD =-20V, I D =-1A
R G =6.0 ,V GS =-10V
V DS =-20V,V GS =-5V,
I D =-3.8A
Total gate charge
Gate-source charge
Gate-drain charge
Q g
Q gs
Q gd
29.6
2.8
8.1
nC
nC
nC
V DS =-20V,V GS =-10V,
I D =-3.8A
Source-drain diode
Diode forward voltage (*)
V SD
-0.89
-1.2
V
T J =25°C, I S =-3.8A,
V GS =0V
Reverse recovery time (?)
t rr
29.8
ns
T J =25°C, I F =-3.8A,
Reverse recovery charge
(?)
Q rr
37.2
nC
di/dt= 100A/ s
NOTES:
(*) Measured under pulsed conditions. Width
300μs. Duty cycle
2%.
(?) Switching characteristics are independent of operating junction temperature.
(?) For design aid only, not subject to production testing.
Issue 1 - March 2006
? Zetex Semiconductors plc 2006
4
www.zetex.com
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